BZG05C43-E3-TR

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The BZG05C43-E3-TR is a single Zener diode designed for general purpose applications. It has a low profile, low power, and a high breakdown voltage. The device is designed for use in power supplies, over-voltage protection, threshold control, and voltage reference applications.

The BZG05C43-E3-TR is a silicon planar Zener diode with a lead-free finish and a plastic package. It has a nominal working voltage of 43V, a maximum power dissipation of 500mW, and a breakdown voltage range of 40-45V. The diode has a reverse current of 80mA.

The BZG05C43 is a single diode and can be used in series with other diodes to form diode networks. This allows it to be used in a variety of applications, including the regulation of power, protection against excessive current, and the controlling of the flow of current.

The working principle of the Zener diode is relatively straightforward. When forward bias is applied, current flows from the anode to the cathode. The forward voltage is limited to the breakdown voltage, and any further increase in voltage does not result in any increase in current. When reverse bias is applied, the diode acts as an open circuit and no current flows. The reverse breakdown voltage remains constant with increasing current, making the diode useful for voltage regulation.

The BZG05C43-E3-TR is a single Zener diode designed for general purpose use. It can be used in a variety of applications, including power supply, over-voltage protection, threshold control, and voltage reference applications. Its low profile, low power, and high breakdown voltage make it an ideal device for these applications. Its principle of operation is simple and straightforward and allows it to be used to regulate voltages and currents.

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