| Allicdata Part #: | BZG05C6V8TR3-ND |
| Manufacturer Part#: |
BZG05C6V8TR3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 6.8V 1.25W DO214AC |
| More Detail: | Zener Diode 6.8V 1.25W Surface Mount DO-214AC |
| DataSheet: |  BZG05C6V8TR3 Datasheet/PDF |
| Quantity: | 1000 |
| 0 +: | $ 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Discontinued at Digi-Key |
| Voltage - Zener (Nom) (Vz): | 6.8V |
| Tolerance: | -- |
| Power - Max: | 1.25W |
| Impedance (Max) (Zzt): | 3.5 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 4V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC |
Description
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Diodes, especially the Zener type, are widely used in electrical applications. The BZG05C6V8TR3 diode is no exception, as it is a single Zener diode which offers several advantages for its use. This article will discuss the application field and working principle of the BZG05C6V8TR3.
Application field of BZG05C6V8TR3
The BZG05C6V8TR3 is mostly used for voltage regulation and protection of components from voltage or current overload. Its voltage regulation range is from 4.7 to 6.2V, with a nominal breakdown voltage of 6V, providing ideal protection to all items operating near 6V.
Due to its low maximum operating current of 1.3mA, it is experts recommend it only for low-power applications. Thanks to its small size, the BZG05C6V8TR3 can be integrated into any circuit with no issues; its silicon construction also allows it to be temperate resistant, hence suitable for a wide range of temperatures, from -25 to 70°C in many cases.
Thanks to its protective and voltage regulation roles, the BZG05C6V8TR3 is recommendable for both low-power industrial and personal circuits. Specific applications include voltage regulation in charging circuits and other low-energy systems, such as remote controls or voltage protection for tiny subsystems.
Working principle of BZG05C6V8TR3
The BZG05C6V8TR3 is a single-zener diode, often called a "breakdown" diode. It works around the PN-junction of the diode, where the concept of "breakdown" is used to describe the effect created when the current and voltage exceed a certain point. When a significant electrical current passes through the diode and the voltage exceeds the diode\'s "breakdown voltage" (in the case of BZG05C6V8TR3 that point being 6V), the diode\'s resistance drops drastically and the current through it improves even more, creating a positive feedback loop that\'s essential for the diode\'s voltage regulation.
As the PN-junction is the most crucial element in all semiconductors, it is also the main source of its electrical properties such as voltage regulation and current flow. The PN-junction of the BZG05C6V8TR3 is formed when two parts of an atom, called the valence and conduction bands, join together at a level which is below the critical level, resulting in a "breakdown" of the atom\'s valence band. This causes electrons to flow current through the diode, which then increases the voltage until it matches the breakdown voltage, thus regulating the voltage and protecting the connected circuits.
Although the BZG05C6V8TR3 is mostly used for low-power applications, its working principle is true for all types of breakdown diodes, from small signal to power type diodes. By understanding the foundations of its working principle and physical construction, users can have better insight into the important role that first-class breakdown diodes play in electronic circuit applications.
In conclusion, the BZG05C6V8TR3 is a single Zener diode mainly recommended for voltage regulation and protection in low-power applications. Its breakdown voltage of 6V offers unique protection to any system operating near this voltage. It is easy to integrate into any small circuit, however its low maximum operating current makes it unfit for large power applications. Thanks to its PN-junction and silicon construction, thediode is temperature resistant, making it ideal for use in a wide range of environments.
The specific data is subject to PDF, and the above content is for reference
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