BZM55B4V7-TR3

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The BZM55B4V7-TR3 diode is classified as a single Zener diode. It is a PN junction diode that is specially designed to operate in the reverse-breakdown region.

The BZM55B4V7-TR3 diode has a reverse breakdown voltage of 4.7 V, making it suitable for applications that require a reliable reverse bias protection for up to 4.7 V. It also has a very low dynamic forward resistance of 74 mΩ, making it ideal for applications that require fast switching times. The current handling capability of the diode is rated at 150 mA, meaning it can handle up to 150 mA of current.

The BZM55B4V7-TR3 diode is commonly used in applications such as temperature sensors, over-voltage protection circuits, voltage clamping circuits, AC line protection, ESD protection circuits, and voltage regulators. It is also suitable for use in general-purpose applications that require a reliable protection against voltages of up to 4.7 V.

The BZM55B4V7-TR3 diode works by utilizing the Zener effect. The Zener effect is a phenomenon that occurs in a reversed-biased PN junction diode, in which a voltage drop of a fixed value is created across the diode. This allows for effective control of the reverse bias voltage and reliable protection against voltages of up to 4.7 V in this case.

The BZM55B4V7-TR3 diode is designed for easy mounting and installation, with surface mount pads and a standard two-pin package. It is highly stable, with excellent temperature and frequency characteristics, making it perfect for use in any kind of environment or application.

The BZM55B4V7-TR3 is a reliable, high-performance Zener diode that is suitable for a wide range of applications. Its reverse breakdown voltage of 4.7 V and low dynamic forward resistance makes it ideal for applications that require fast switching times and reliable protection against voltages of up to 4.7 V.

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