BZM55B4V3-TR

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Diodes are semiconductor components consisting of two or more layers of either N-type or P-type semiconductors. Such materials were used in the development of the BZM55B4V3-TR diode, a type of Zener diode. Zener Diodes are manufactured to provide a regulated reverse breakdown voltage. This breakdown voltage is specified when the diode is used in the reverse direction, i.e. the anode is connected to ground. The BZM55B4V3-TR is a single Zener diode with a breakdown voltage of 4V and a maximum power dissipation of 500 mW.

The BZM55B4V3-TR is specifically designed for applications requiring a high voltage breakdown that is tolerant to voltage and temperature fluctuations. This Zener diode is known for its ability to provide extremely stable voltage regulation and excellent protection against voltage transients. It is commonly used for over-voltage protection, voltage regulation and clamping applications.

In its simplest form, the BZM55B4V3-TR is a two terminal PN junction. The junction is created by joining the two semiconductors together, with the drain the P-type and the source the N-type. The characteristics of the junction are determined by the doping levels of the two semiconductors and their relative distance apart. When forward biased, electrons are pushed across the junction, producing a current flow. When a voltage is applied in the opposite direction (reverse biased), the epitaxial layer of the diode acts to create a higher potential barrier and thus preventing any current from flowing.

When the reverse bias voltage reaches the breakdown voltage of the junction, an avalanche occurs and a large current flows. This breakdown voltage is determined by the doping levels of the two semiconductors and their distance apart. The BZM55B4V3-TR avalanche voltage is specified as 4V and is relatively stable over the operating temperature range.

The BZM55B4V3-TR Zener diode is designed to maintain a constant voltage in the reverse mode. When forward biased, the protection diode will also regulate current in order to keep the voltage at a constant level. This is achieved by controlling the reverse current flow and protecting the circuit from over-voltage transients. The BZM55B4V3-TR can also be used to protect sensitive electronic components from overvoltage events.

The BZM55B4V3-TR is a robust and reliable Zener diode, and is an ideal choice for a wide range of applications. It is suitable for over-voltage protection and transient voltage protection. It can also be used for voltage regulation and current limiting applications in power supplies and other control circuits. The BZM55B4V3-TR diode is widely used for electro-optic and optoelectronic applications due to its high breakdown voltage, low leakage current, and low operating temperature coefficient.

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