Allicdata Part #: | BZM55C2V7-TR3-ND |
Manufacturer Part#: |
BZM55C2V7-TR3 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 500MW MICROMELF |
More Detail: | Zener Diode 2.7V 500mW Surface Mount MicroMELF |
DataSheet: | BZM55C2V7-TR3 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01912 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 2.7V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 600 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, No Lead |
Supplier Device Package: | MicroMELF |
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The BZM55C2V7-TR3 is a type of Single Zener Diodes. It is commonly used in diverse industrial and commercial applications, from providing power conversion and regulation to protecting sensitive components from electrostatic discharges. This article will provide an overview of the BZM55C2V7-TR3 Single Zener Diode and its applications, as well as its working principles.
Overview
The BZM55C2V7-TR3 is a Single Zener Diode, consisting of a 3.2 volt – 5.6 Volt Zener Diode. It is a medium power, bipolar device encased in a small TO-92 package with an integrated voltage regulator. The diode\'s power dissipation is rated at 500 milliwatts, while its maximum current of 125 °C and 175 °C rated peak is 2.5 amps at 25 °C ambient temperature and 1.0 amps at175 °C. Its terminal voltage and power dissipation are adjustable depending on its application. The device\'s high temperature resistance (up to 175 °C), low power dissipation, and adjustable voltage/power capabilities make it suitable for a variety of applications.
Applications
The BZM55C2V7-TR3 is primarily used in a variety of applications that require voltage regulation or power conversion and regulation. These include mobile phone applications such as mobile phones, digital cameras, portable media players, etc. It is also suitable for use in power supplies, computer hardware, instrumentation, battery-powered devices, and automotive electronics. Additionally, the device is often used to protect other components from electrostatic discharges and other electrical disturbances. In particular, its maximum reverse current of 5 microamps and its ultra-low junction capacitance of only 0.1 pF make it ideal for protecting sensitive components from ESD and electrical transients, such as MOSFET switches and logic ICs.
Working Principle
The BZM55C2V7-TR3 operates on the principle of the Zener breakdown. In a Zener diode, the electric field strength increases with an applied reverse bias voltage. When the electric field strength is high enough, the junction breaks down, allowing current to flow in the reverse direction. This breakdown process creates a fixed voltage drop at the diode junction, which is the Zener voltage. This Zener voltage is independent of the applied voltage, current, or temperature.
In the case of the BZM55C2V7-TR3, the Zener voltage is adjustable. By varying the current and voltage applied, the power dissipation and terminal voltage (Zener voltage) can be adjusted. As the voltage across the diode increases, the current passing through increases, resulting in higher power dissipation and Zener voltage. This capability is useful in many applications, allowing the diode to be used as a voltage regulator or power converter.
Conclusion
The BZM55C2V7-TR3 is a medium power, single Zener Diode encased in a TO-92 package with an integrated voltage regulator. Its adjustable voltage/power features, high temperature resistance, and low power dissipation make it suitable for a variety of applications, from mobile phone applications to power supplies, computer hardware, and other sensitive electronics. The diode\'s Zener breakdown principle allows it to be used as a voltage regulator or power converter, providing effective power regulation and protection from electrical transients and ESD.
The specific data is subject to PDF, and the above content is for reference
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