BZM55B68-TR Allicdata Electronics
Allicdata Part #:

BZM55B68-TR-ND

Manufacturer Part#:

BZM55B68-TR

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 500MW MICROMELF
More Detail: Zener Diode 68V 500mW Surface Mount MicroMELF
DataSheet: BZM55B68-TR datasheetBZM55B68-TR Datasheet/PDF
Quantity: 1000
12500 +: $ 0.02249
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 68V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 1000 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 51V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Description

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Diodes - Zener - Single

The BZM55B68-TR is a single Zener diode designed for an operating voltage of 68V with a maximum power dissipation rating of 0.5W. The diode is designed for use in industrial and commercial applications, and can be found in automotive electronics, motor control and telecommunications systems.

Zener diodes exhibit a reverse breakdown voltage, known as the Zener voltage. This voltage is highly stable over the diode\'s operating temperature, leading to a precise and repeatable voltage level within electronic circuits. Zener diodes find uses in many electronic circuits, including voltage regulation, level shifting, voltage clamping, resonant circuits, and transient suppression.

BZM55B68-TR Zener diodes are typically used in low voltage applications such as powering small parts in consumer electronics, voltage limiting, and clamping circuits. The diode\'s small form factor and lightweight construction allows it to be incorporated into highly space and weight-sensitive environments, such as automotive and mobile electronics.

The working principle of the BZM55B68-TR Zener diode is based on the PN junctions used in all semiconductor devices. It consists of two regions, a positively doped region and a negatively doped region. When a voltage is applied across the PN junction, it creates an electric field at the junction. When the applied voltage is greater than the diode\'s reverse breakdown voltage, the electric field across the junction becomes strong enough to cause a current to flow through the diode.

At low voltages, the diode acts as an ordinary diode, allowing current to flow through in one direction. When the voltage is above the Zener voltage, however, the electric field flips the normal polarity and the diode acts as a pathway for current to flow in both directions. This reverse current capability is what enables the BZM55B68-TR Zener diode to regulate voltages, limit voltage levels, and provide transient suppression.

Due to the small size and high current rating of the BZM55B68-TR diode, it is ideally suited for applications where space is at a premium. The diode\'s relatively high reverse breakdown voltage and low forward voltage drop, coupled with its low power consumption, make it an ideal component for mobile and automotive electronics.

The BZM55B68-TR Zener diode is an ideal component for applications that require a reliable source of regulated voltage, such as automotive and industrial control systems. Its reverse voltage capability and low forward voltage drop allow for highly efficient voltage regulation and level shifting. The device is also well-suited for use in applications requiring fast response times and transient suppression, such as motor control and telecommunications systems.

The specific data is subject to PDF, and the above content is for reference

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