BZM55B9V1-TR

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By definition, the BZM55B9V1-TR is a single zener diode. It is a two-terminal semiconductor device that utilizes a reverse-biased pn junction to allow current to flow in the reverse direction. It has a wide range of applications, primarily in regulating and stabilizing circuit voltages. This article provides an in-depth look into the BZM55B9V1-TR diode, from its application field and working principle to its physical characteristics and electrical performance.

Applications

The BZM55B9V1-TR is designed for power applications. It is typically used in power management systems, such as laptops, phones, and other handheld devices, as well as system control circuits. The diode is also used in lighting circuits, especially in LED lighting, where it is used to control the current flowing through the LED to ensure reliable operation while prolonging the LED’s useful life. Other applications include radio frequency (RF) circuits, mobile communication systems, power conditioning and switching, automotive electronics, and industrial automation.

Working Principle

The working principle of the BZM55B9V1-TR is relatively simple. It is a voltage-controlled variable resistor with a breakover voltage - the voltage at which the device starts to conduct. In other words, the voltage across the diode drops when its zener voltage is reached, enabling it to begin conducting current. The zener voltage, in turn, is determined by the dopant concentration of the junction material.

When reverse bias voltage is applied to the BZM55B9V1-TR, electrons from the N-type material travel across the junction to recombine with holes in the P-type region. This process causes a decrease in the barrier voltage, allowing current to flow. Then, the current increases exponentially until it reaches the zener limit. In this state, the diode implements its primary function - regulating and stabilizing the electric current.

Physical Characteristics

The BZM55B9V1-TR diode has a rectangular shape with a length of 6.35 mm, a width of 4.90 mm, and a height of 1.60 mm. Its total weight is 0.003875 g, and its junction temperature range is -40°C to +125°C; this is fairly standard for zener diodes. Furthermore, its typical thermal resistance is 60 °C / W, which is also on the lower end for zener diodes.

Electrical Performance

The BZM55B9V1-TR has a breakdown (or zener) voltage of 9V, which is fairly low, and nominal zener impedance of 200 mOhms at 8.7 V. Its power dissipation is 350 mW, and its maximum forward voltage is 1.3 V at 1 A. In addition, the diode has a low maximum reverse current of 4.5 μA at 25°C, which is essential in order to maintain a stable voltage value.

In summary, the BZM55B9V1-TR is a single zener diode that can be used for a wide range of applications, including power management systems and lighting circuits. It is a two-terminal semiconductor device that employs a reverse-biased pn junction to allow current to flow in the reverse direction. Additionally, the diode has a typical thermal resistance of 60°C/W and a breakdown voltage of 9V, which make it suitable for a wide array of applications.

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