Allicdata Part #: | BZM55B18-TRGITR-ND |
Manufacturer Part#: |
BZM55B18-TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 500MW MICROMELF |
More Detail: | Zener Diode 18V 500mW Surface Mount MicroMELF |
DataSheet: | BZM55B18-TR Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 18V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 170 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 13V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, No Lead |
Supplier Device Package: | MicroMELF |
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Diodes are an essential component in any electrical system as they mainly act as a junction of two electrodes and can allow current to flow in one direction only. Zener diodes are an example of such components; they are specifically designed to allow current to flow in two directions and retain a stable voltage level regardless of signal variations. The BZM55B18-TR is a single Zener diode that can be used in various applications and has various working principles.
The BZM55B18-TR is a type of Zener diode that is suitable for switching applications like digital, power or signal sensing. This Zener Diode offers a low VZ of 18V, low reverse leakage current, fast response time and small chip size. These features make the BZM55B18-TR an ideal choice for many applications, such as ESD protection, DC-DC converters, switching in power supplies and signal sensing.
The BZM55B18-TR can maintain a constant voltage level thanks to its Zener breakdown effect established by reverse biasing the diode. This capability allows it to perform AC coupling, LED flicker modulation, reverse voltage protection and motor control, amongst other things. The diode also offers excellent ESD robustness thanks to its superior silicon nitride protective layers. This allows it to cope with higher levels of ESD than other diodes without suffering any permanent damage as a result.
The working principle of the BZM55B18-TR is relatively simple. In this type of diode, when a reverse voltage is applied to it, electrons from the N-type region flow into the P-type region and fill up the valley until the barrier is breached. This process is known as the Zener breakdown and leads to a sharp rise in the current and voltage level. The voltage drop remains constant as long as the current remains around the diode’s nominal level. This makes the diode perfect for use in AC and DC circuits as it ensures a stable voltage level regardless of signal variations.
The BZM55B18-TR is a single Zener diode which can be used in a variety of applications due to its low voltage level, fast response time and excellent ESD robustness. This diode is ideal for switching applications like digital, power and signal sensing, ESD protection, DC-DC converters, switching in power supplies and motor control. The working principle of the diode is based on the Zener breakdown effect and it allows for a steady voltage level to be kept regardless of fluctuating signals.
The specific data is subject to PDF, and the above content is for reference
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