BZM55B6V2-TR

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	6.2V
Tolerance:	--
Power - Max:	500mW
Impedance (Max) (Zzt):	200 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 2V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	2-SMD, No Lead
Supplier Device Package:	MicroMELF

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Diodes - Zener - SingleBZM55B6V2-TR is a single zener diode featuring a low maximum zener impedance (IZmax) of 4.0 µA, a low junction capacitance of 10 pF, and a low maximum reverse current of 6 mW. It is small and offers a wide operating temperature range of -55 to +125 °C and a wide zener voltage range from 24 to 74 at junction temperatures from +25 to +125 °C.This diode is ideal for use in applications where high switching speed and low power dissipation are essential, such as reverse voltage protection, fast switching, voltage clamping, and high-frequency rectification. On-chip protection circuits prevent power over-current, up to 6 mA. Also, it is designed to provide maximum stability and reliability, allowing a short recovery time after protection.BZM55B6V2-TR is designed with a low-voltage reverse breakdown, allowing it to regulate the output voltage of power supplies and AC/DC converters by monitoring current variations, and thus, providing an improved reliability and stability. An importance feature of this diode is that it is made of zener-graded oxidation-barrier silicon, enabling it to withstand a large reverse voltage without current spikes or voltage overruns. Additionally, the BZM55B6v2-TR is ideal for switching power supplies, DC/DC converters, AC-to-DC converters, and other applications that need high current handling and noise immunity. It is designed with a low dynamic impedance (ZR) of 25 Ohms, allowing it to produce a low level of reverse leakage current and reduce noise. It also features a wide temperature range of −55 to +125°C, enabling it to operate reliably in temperatures up to +125 °C.In conclusion, the BZM55B6V2-TR is an ideal diode for applications requiring high switching speed and low power dissipation. Its low voltage breakdown, low dynamic impedance, wide temperature range, and low maximum zener impedance make it suitable for numerous applications. The diode is also highly reliable, providing maximum stability and a short recovery time after protection.

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