BZS55C12 RXG Allicdata Electronics
Allicdata Part #:

BZS55C12RXG-ND

Manufacturer Part#:

BZS55C12 RXG

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 12V 500MW 1206
More Detail: Zener Diode 12V 500mW ±5% Surface Mount 1206
DataSheet: BZS55C12 RXG datasheetBZS55C12 RXG Datasheet/PDF
Quantity: 1000
30000 +: $ 0.01693
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Description

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The BZS55C12 RXG is a Silicon Zener Diode built with planar construction. This device offers very low leakage current, fast switching and carefully controlled VZ selection.

The BZS55C12 RXG has a Zener voltage range from 27V to 75V with a full power dissipation of 400mW and an operating temperature range from –65°C to +150°C. The breakdown voltage of this diode is obtained from the precise selection of resistor and transistor trimming. This provides a very precise voltage reference.

The BZS55C12 RXG belongs to the single zener diode family. This type of diode is used in a variety of applications including voltage regulation, signal conditioning, temperature sensing and signal isolation. When operating in the reverse breakdown region, the current through the diode remains nearly constant no matter the changes in the applied voltages. This makes the diode very useful for voltage regulation.

The BZS55C12 RXG diode can be used in a variety of applications such as voltage regulation, signal conditioning, current sensing, harmonic suppression and signal isolation. The device is also suitable for use in reverse polarity protection circuits, where a reverse voltage cannot exceed a predetermined value or a preset point in order to maintain the required voltage level.

The BZS55C12 RXG diode works on the principle of Zener breakdown, which is based on the injection of charge carriers into the non-Silicon substrate at a reverse bias voltage in excess of the Zener voltage. The Zener voltage is determined by the voltage and width of the non-Silicon substrate yin the diode. When the reverse bias in the diode exceeded the Zener voltage, the carriers quickly depleted and the stored energy is released in the form of current.

The BZS55C12 RXG has a low reverse leakage current and a fast switching times, making it suitable for high voltage regulation and current sensing applications. It is also an excellent choice for surge protection and signal isolation applications. The main advantage of the BZS55C12 RXG is its accuracy and reliability. Due to its precise voltage trimming and thermal management, this diode ensures that the VRM power supply is regulated precisely.

The BZS55C12 RXG is a reliable diode with superior performance and wide voltage range, making it suitable for many applications in the automotive, industrial and medical sectors. The device also works nicely in high frequency digital circuit and point of load voltage regulation designs. With its reliable and dependable performance, the BZS55C12 RXG is a perfect choice for any application requiring a reliable, dependable and accurate Zener diode.

The specific data is subject to PDF, and the above content is for reference

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