BZS55B20 RXG Allicdata Electronics
Allicdata Part #:

BZS55B20RXG-ND

Manufacturer Part#:

BZS55B20 RXG

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 20V 500MW 1206
More Detail: Zener Diode 20V 500mW ±2% Surface Mount 1206
DataSheet: BZS55B20 RXG datasheetBZS55B20 RXG Datasheet/PDF
Quantity: 1000
30000 +: $ 0.01831
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 20V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 55 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 15V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Description

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The BZS55B20 RXG is a high-performance, advanced power diode from the Zener diode family, specifically designed for low voltage applications. It is a single diode type and operates over a wide range of temperatures. Manufacturers have designed this diode to offer superior performance with excellent resistance to short circuit and overload damage.

The design and performance features of this diode make it suitable for a variety of applications such as battery powered and radio/wireless devices, as well as industrial equipment, electric vehicles, and high-speed signal switching.

This diode works on the principle that the electric current of a diode is directly proportional to the electric voltage applied to it. This is because the electric current is controlled by electric potential difference between the gate and the source terminal.

When the voltage applied to the gate and source is below the threshold voltage, the diode is in the breakdown region and the current suddenly increases. In this state, the electric current magnitude is much higher than the current of a reverse biased diode. This is called breakdown voltage or Zener voltage.

The BZS55B20 RXG is specifically designed to handle low voltage applications. It has a low breakdown voltage (3.3V) and provides superior protection against over-current. In addition, it has superior reverse leakage current characteristics and excellent temperature cycling performance. The device also has an excellent impedance ratio to help prevent any damage due to high-frequency transients.

Compared to standard Zener diodes, the BZS55B20 RXG diode is designed to deal with extremely harsh conditions. It is designed to meet the requirements of highly automated processes, in addition to having a high reliability and physical stability under rigorous conditions. It is also suitable for automotive, military and industrial applications.

The main benefit of the BZS55B20 RXG diode is its ability to handle low voltage applications in an efficient and reliable manner. It is designed to provide superior protection against over-current and excellent temperature cycling performance. Additionally, its high impedance ratio improves noise immunity, minimizing any damage due to high-frequency transients. With its low voltage operation and excellent protection, the BZS55B20 RXG is suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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