BZT03C91-TR Allicdata Electronics

BZT03C91-TR Circuit Protection

Allicdata Part #:

BZT03C91-TR-ND

Manufacturer Part#:

BZT03C91-TR

Price: $ 0.15
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 75V 126V SOD57
More Detail: N/A
DataSheet: BZT03C91-TR datasheetBZT03C91-TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
25000 +: $ 0.14112
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Voltage - Clamping (Max) @ Ipp: 126V
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: --
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 2.4A
Series: --
Voltage - Breakdown (Min): 85V
Voltage - Reverse Standoff (Typ): 75V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS-Diodes, also known as Transient Voltage Suppressor Diodes are electronic components that are used for protection against overvoltage. They are used in almost every electronics system, since they provide a very effective and reliable protection. The BZT03C91-TR is a particularly suitable TVS-Diode for applications involving a wide range of voltage peaks and large currents.

The BZT03C91-TR application field includes, but is not limited to, DC/DC power converters, uninterruptible power supplies, DC-filtered power supplies, protection against surge, and in cases when there is a need to protect against high voltage pulses, lightning strike, and frequent overvoltage situations.

The working principle of the BZT03C91-TR relies on a symmetric breakdown voltage which provides a voltage clamp capable of operating when voltage peaks trigger on the junction of the diode. This in combination with the diode\'s parasitic capacitance, allows the device to absorb and dissipate energy thus diverting it away from the sensitive circuit paths. In effect, the device acts like a \'fuse\' and prevents the destruction of the electrical device on the other side of the diode.

The BZT03C91-TR is constructed from a Resin-Encapsulated N-channel Junction Field- Effect Transistor (MOSFET) and a back-to-back Zener Diode combination. The MOSFET device is used to control the reverse bias leakage current while the Zener Diode is used to provide voltage regulation. The combination of these components and the symmetric breakdown voltage, provide excellent protection against a wide range of overvoltage scenarios.

The BZT03C91-TR also has a very low leakage current, and a relatively low Capacitance for its class, making it a perfect choice for high speed switching applications. The symmetric breakdown voltage allows the device to handle transients in the voltage range from 0.1 V to 140 V (for impulse duration of 8/20 us), with a peak pulse current ranging from 2 to 40 A (depending on the Reverse Stand-Off Voltage).

Overall, the BZT03C91-TR offers great protection for a wide range of voltage peaks, current levels, and overvoltage scenarios, making it a valuable choice for a wide variety of applications. It has a high level of reliability and offers a very low leakage current, making it an excellent choice for applications that require a high degree of protection.

The specific data is subject to PDF, and the above content is for reference

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