Allicdata Part #: | 1727-4952-2-ND |
Manufacturer Part#: |
BZV55-B2V4,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ZENER 2.4V 500MW SOD80C |
More Detail: | Zener Diode 2.4V 500mW ±2% Surface Mount SOD-80C |
DataSheet: | BZV55-B2V4,115 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.04273 |
5000 +: | $ 0.03846 |
12500 +: | $ 0.03418 |
25000 +: | $ 0.03205 |
62500 +: | $ 0.02849 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 2.4V |
Tolerance: | ±2% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 100 Ohms |
Current - Reverse Leakage @ Vr: | 50µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80C |
Base Part Number: | BZV55-B2V4 |
Description
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Introduction to BZV55-B2V4,115
The BZV55-B2V4,115 is an epitaxial planar Zener diode, developed by Central Semiconductor Corporation for use in a variety of applications. Its nominal voltage rating is 2.4 V, with minimum tolerance of ±3%, and power dissipation of 200 mW. It is a type of diode that uses a thin layer of PN type semiconductor material, typically either silicon or germanium, deposited on a substrate material. It is primarily used for voltage regulation and other applications where a precise voltage breakdown is desired.Application Fields of BZV55-B2V4,115
The BZV55-B2V4,115 is commonly used in various types of electronics, including industrial and consumer products. The main application areas include:- Power supply voltage regulation
- Voltage clamping
- Voltage transient protection
- Electronic circuit protection
- DC current regulation
- Military and aerospace applications
Working Principle of BZV55-B2V4,115
The BZV55-B2V4,115 works on the principle of Zener breakdown. When the reverse bias voltage is applied across the diode, electrons in the N-type semiconductor material are attracted towards the P-type material, and a depletion region is formed.If the reverse bias voltage is increased beyond a certain point, the width, or strength, of the depletion region increases. At a certain point, the width of the depletion region becomes large enough for a sudden surge of electrons to occur. This is called the Zener breakdown, and it causes the voltage across the diode to remain constant, regardless of any variations in supply voltage or load.The Zener breakdown voltage of the BZV55-B2V4,115 is set at the factory, and it is highly accurate and stable over different operating conditions. This ensures that the voltage across the diode remains constant, offering great reliability and performance in a variety of applications.Conclusion
The BZV55-B2V4,115 is an epitaxial planar Zener diode developed by Central Semiconductor Corporation. It is used in a variety of applications, including power supply voltage regulation, voltage clamping, voltage transient protection, DC current regulation, and military and aerospace applications. The BZV55-B2V4,115 operates on the principle of Zener breakdown, where a reverse bias voltage is applied across the diode which causes the voltage across the diode to remain constant, regardless of variations in supply voltage or load. Its accurate and reliable operation makes it a popular choice for many types of applications.The specific data is subject to PDF, and the above content is for reference
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