BZV55C2V7 L1G Allicdata Electronics
Allicdata Part #:

BZV55C2V7L1G-ND

Manufacturer Part#:

BZV55C2V7 L1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 2.7V 500MW MINI MELF
More Detail: Zener Diode 2.7V 500mW ±5% Surface Mount Mini MELF
DataSheet: BZV55C2V7 L1G datasheetBZV55C2V7 L1G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01138
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 2.7V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 85 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Description

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Overview of BZV55C2V7 L1G

The BZV55C2V7 L1G is a zener single diode with a voltage range of 2.49V to 200V. It is designed for applications which require stable low power supply requirements with low forward voltages and low reverse current leakage in both pulsed and continuous operation. It is designed to have a low noise characteristics and it can be used in a variety of applications.

Applications

The BZV55C2V7 L1G is most commonly used in precision current limiting and voltage regulation applications, such as reverse voltage protection, overvoltage protection, and radio transmitter or receiver protection. It can also be used in low power supply requirements such as current reference circuits, sample and hold circuits, and precision timing circuits. Due to its low reverse current leakage, it is also useful in low noise analogue and digital circuits such as linear Hybrid Integrated Circuits (ICs) and high-speed digital circuits. It can also be used in high power circuits such as power supply regulation and voltage level shifting applications.

Working Principle

The BZV55C2V7 L1G operates on the principle of a zener diode, which is formed when an anode and a cathode are connected together with a small non-conductive gap between them. The anode and cathode are usually opposite to each other and reverse biased—that is, the voltage applied to the anode is lower than the voltage applied to the cathode.When reverse bias is applied to the diode, the zener effect takes place. This effect is when the anode voltage is decreased and the electron current flowing from the anode to the cathode increases, creating an avalanche effect in the depletion region. This increases the electric field until it is strong enough to cause a large-scale current flow between the anode and the cathode. The voltage of the diode remains relatively constant over a range of current as the excess current allows for a greater number of electrons to cross the gap between the anode and the cathode, maintaining this avalanche effect. The maximum voltage that can be applied to the diode until it enters zener breakdown mode is known as the breakdown voltage.

Conclusion

The BZV55C2V7 L1G is a single zener diode which is designed to provide stability and low power supply requirements in continuous and pulsed applications. It has a low noise characteristic and is suitable for a wide range of applications including current limiting, voltage regulation, and radio transmitter or receiver protection. It operates on the principle of a zener diode which creates an avalanche effect in the depletion region of the diode when reverse bias is applied, allowing for a stronger electric field and a constant current flow.

The specific data is subject to PDF, and the above content is for reference

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