![BZV55C12 L1G Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | BZV55C12L1G-ND |
Manufacturer Part#: |
BZV55C12 L1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 12V 500MW MINI MELF |
More Detail: | Zener Diode 12V 500mW ±5% Surface Mount Mini MELF |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.01138 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 9.1V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | Mini MELF |
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The BZV55C12 L1G diode is one of the most commonly used single Zener diodes. It is used in diverse applications, from high voltage rectification to signal conditioning, in various types of circuits.
This diode has a breakdown voltage of 12 volts, meaning that when the voltage applied to the diode is greater than 12 volts, it conducts, allowing current to pass through it. One of its most common applications is as a voltage regulator for low frequency AC/DC power supplies. The diode helps to regulate the voltage output, even in the event of variation in input voltage or load current.
It can also be used in the design of tuned circuits in radio communications and signal conditioning. Applied in the ac portion of a circuit, the BZV55C12 L1G diode behaves like a capacitive tuned circuit, which, in combination with its high breakdown voltage, allows it to be used to filter the noise from incoming signals, ensuring the clarity and reliability of any audio transmission.
This diode can also be used for high voltage rectification and power supply design, where certain circuits require the voltage to be stepped down to acceptable levels or maintained at a fixed level, regardless of any changes in the input voltage.
The BZV55C12 L1G Zener diode has an operating temperature range of -55°C and 150°C, making it suitable for a wide range of applications. Its high reverse breakdown voltage (12V) also makes it useful in applications with high voltage signals.
In terms of the working principle, the BZV55C12 L1G diode is a silicon power diode based on the principle of a PN junction. When a voltage is applied to the diode, electrons and holes are attracted to the two corresponding layers, creating a depletion layer at the junction. This layer forms a barrier which prevents current from passing in either direction.
When the applied voltage is less than the breakdown voltage of the diode, the diode does not conduct current. However, when a voltage greater than the breakdown voltage is applied, the depletion layer can become saturated, allowing current to pass from the anode to the cathode. This allows the diode to be used as a voltage regulator, allowing it to block any unwanted currents while allowing a certain amount of current to pass through.
In summary, the BZV55C12 L1G diode is one of the most versatile single Zener diodes, suitable for a wide variety of applications, such as high voltage rectification, signal conditioning, and voltage regulation. It works based on the principle of PN junction with a reverse breakdown voltage of 12 volts.
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