Allicdata Part #: | BZV55B12L0G-ND |
Manufacturer Part#: |
BZV55B12 L0G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 12V 500MW MINI MELF |
More Detail: | Zener Diode 12V 500mW ±2% Surface Mount Mini MELF |
DataSheet: | BZV55B12 L0G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01429 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±2% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 9.1V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | Mini MELF |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BZV55B12 L0G is a member of the diodes-zener-single family featuring a power rating of 12,000 mW and a working voltage of 5.5 V. It is a popular choice for applications where a steady voltage and dependable performance is required for the purpose of voltage regulation and protection against over-voltage. It is frequently used in audio, television and computer systems, as well as telecom, automotive, and industrial equipment.
The BZV55B12 L0G is a zener diode, a device made up of an anode, a negatively charged cathode, and a thin, lightly doped intrinsic semiconductor layered between them. The intrinsic layer is made up of a zero-resistive element surrounded by a region of higher resistivity. This is the zener breakdown region, and it provides a strictly fixed breakdown voltage.
In operation, when a steady direct current is connected to the anode and cathode, the voltage across the intrinsic layer will eventually become high enough that the layer transitions from a low-resistivity region to one with high-resistivity. This transition is known as \'zener breakdown\' and it produces an avalanche effect that results in the potential difference between the two terminals becoming significantly lower than the applied voltage. A change in the applied voltage will eventually result in the diode switching between its low- and high-resistance states until it returns to the breakdown voltage.
This process results in exactly the same well-regulated voltage being applied to the two terminals of the BZV55B12 L0G regardless of the size of applied current or the changes in input voltage. Other components in the circuit (such as transistors or capacitors) can be used to regulate the depth of the breakdown voltage.
The BZV55B12 L0G can also be used for a variety of other functions such as protection again over-voltage transients and reverse bias protection by allowing a large current (avalanche current) to flow from the anode to the cathode in the event of an over-voltage situation. It can also be used to limit the peak current in a wave-shaping circuit, as well as a host of other applications.
The BZV55B12 L0G is a popular choice for regulated DC power source applications where it can provide stable output voltages over a wide range of current levels. It is also commonly used in audio and telecom equipment, computer systems, and televisions. Its small size and its low breakdown voltage make it well suited to compact applications where space is at a premium.
The BZV55B12 L0G is an efficient and dependable choice for a wide range of voltage-regulating and protection applications. Its low breakdown voltage and avalanche current make it ideal for providing steady DC output voltages. It is also capable of withstanding over-voltage situations and a variety of other overload conditions. It is an excellent choice for a wide array of consumer, commercial, and industrial electronics.
The specific data is subject to PDF, and the above content is for reference
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