Allicdata Part #: | 1727-4970-2-ND |
Manufacturer Part#: |
BZV55-C3V3,115 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ZENER 3.3V 500MW SOD80C |
More Detail: | Zener Diode 3.3V 500mW ±5% Surface Mount SOD-80C |
DataSheet: | BZV55-C3V3,115 Datasheet/PDF |
Quantity: | 20000 |
2500 +: | $ 0.02193 |
5000 +: | $ 0.01978 |
12500 +: | $ 0.01720 |
25000 +: | $ 0.01548 |
62500 +: | $ 0.01376 |
125000 +: | $ 0.01147 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.3V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 95 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80C |
Base Part Number: | BZV55C3V3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
BZV55-C3V3,115 is a single zener diode which can be used for a variety of purposes, such as over-voltage protection and voltage regulation. The diode is constructed from a high-grade silicon material, making it a reliable and high-performing part. It has a breakdown voltage of 3.3V , with a maximum power dissipation of 1.5W and an operating temperature range of -55°C to +125°C.
Application Fields
The BZV55-C3V3,115 diode is mainly used for over-voltage protection and voltage regulation. It can be used in a variety of applications, including power supplies, DC/DC converters, computer systems, and medical devices. For example, the diode can be used in a power supply for over-voltage protection of a connected device, or for voltage regulation in order to maintain a constant output voltage.
Working Principle
The BZV-C3V3,115 diode has a PN junction and works by utilizing a Zener effect. The Zener effect occurs when there is a large enough difference in the concentrations of P and N type dopants in the semiconductor material. When a reverse bias voltage is applied to the diode, free electrons will be forced through the junction and be recombined with the holes of the N-type material. This process creates a large electric field which allows current to flow in the reverse direction, causing the diode to break down. This breakdown voltage is usually equal to the diode\'s nominal breakdown voltage, which in this case is 3.3V.
Conclusion
The BZV55-C3V3,115 is a single zener diode used for a variety of purposes, such as over-voltage protection and voltage regulation. It is constructed from a high-grade silicon material and has a breakdown voltage of 3.3V, with a maximum power dissipation of 1.5W and an operating temperature range of -55°C to +125°C. The diode utilizes the Zener effect to break down a reverse bias voltage, resulting in its nominal breakdown voltage of 3.3V. This makes it suitable for use in a variety of applications, including power supplies, DC/DC converters, computer systems, and medical devices.
The specific data is subject to PDF, and the above content is for reference
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