
Allicdata Part #: | 1727-4970-2-ND |
Manufacturer Part#: |
BZV55-C3V3,115 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ZENER 3.3V 500MW SOD80C |
More Detail: | Zener Diode 3.3V 500mW ±5% Surface Mount SOD-80C |
DataSheet: | ![]() |
Quantity: | 20000 |
2500 +: | $ 0.02193 |
5000 +: | $ 0.01978 |
12500 +: | $ 0.01720 |
25000 +: | $ 0.01548 |
62500 +: | $ 0.01376 |
125000 +: | $ 0.01147 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.3V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 95 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80C |
Base Part Number: | BZV55C3V3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
BZV55-C3V3,115 is a single zener diode which can be used for a variety of purposes, such as over-voltage protection and voltage regulation. The diode is constructed from a high-grade silicon material, making it a reliable and high-performing part. It has a breakdown voltage of 3.3V , with a maximum power dissipation of 1.5W and an operating temperature range of -55°C to +125°C.
Application Fields
The BZV55-C3V3,115 diode is mainly used for over-voltage protection and voltage regulation. It can be used in a variety of applications, including power supplies, DC/DC converters, computer systems, and medical devices. For example, the diode can be used in a power supply for over-voltage protection of a connected device, or for voltage regulation in order to maintain a constant output voltage.
Working Principle
The BZV-C3V3,115 diode has a PN junction and works by utilizing a Zener effect. The Zener effect occurs when there is a large enough difference in the concentrations of P and N type dopants in the semiconductor material. When a reverse bias voltage is applied to the diode, free electrons will be forced through the junction and be recombined with the holes of the N-type material. This process creates a large electric field which allows current to flow in the reverse direction, causing the diode to break down. This breakdown voltage is usually equal to the diode\'s nominal breakdown voltage, which in this case is 3.3V.
Conclusion
The BZV55-C3V3,115 is a single zener diode used for a variety of purposes, such as over-voltage protection and voltage regulation. It is constructed from a high-grade silicon material and has a breakdown voltage of 3.3V, with a maximum power dissipation of 1.5W and an operating temperature range of -55°C to +125°C. The diode utilizes the Zener effect to break down a reverse bias voltage, resulting in its nominal breakdown voltage of 3.3V. This makes it suitable for use in a variety of applications, including power supplies, DC/DC converters, computer systems, and medical devices.
The specific data is subject to PDF, and the above content is for reference
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BZV55C4V7 | Microsemi Co... | 2.11 $ | 1000 | DIODE ZENER 4.7V DO213AAZ... |
BZV55C8V2 | Microsemi Co... | 2.11 $ | 1000 | DIODE ZENER 8.2V DO213AAZ... |
BZV55-B5V6,135 | Nexperia USA... | 0.04 $ | 1000 | DIODE ZENER 5.6V 500MW SO... |
BZV55C9V1-TP | Micro Commer... | 0.04 $ | 10000 | DIODE ZENER 9.1V 500MW MI... |
BZV55B13 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 13V 500MW MIN... |
BZV55-B22,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ZENER 22V 500MW SOD... |
BZV55B8V2 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 8.2V 500MW MI... |
BZV55-C27,115 | Nexperia USA... | 0.02 $ | 1000 | DIODE ZENER 27V 500MW SOD... |
BZV55B16 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 16V 500MW MIN... |
BZV55C10 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 10V 500MW MIN... |
BZV55C12 L1G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 12V 500MW MIN... |
BZV55B4V7 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 4.7V 500MW MI... |
BZV55B62 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 62V 500MW MIN... |
BZV55B47 L1G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 47V 500MW MIN... |
BZV55C20 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 20V 500MW MIN... |
BZV55C13 L1G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 13V 500MW MIN... |
BZV55C36 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 36V 500MW MIN... |
BZV55C2V7 L1G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 2.7V 500MW MI... |
BZV55B15 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 15V 500MW MIN... |
BZV55B33 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 33V 500MW MIN... |
BZV55B16 L1G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 16V 500MW MIN... |
BZV55B62 L1G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 62V 500MW MIN... |
BZV55-C4V7,135 | Nexperia USA... | 0.02 $ | 10000 | DIODE ZENER 4.7V 500MW SO... |
BZV55B15 L1G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 15V 500MW MIN... |
BZV55-C47,115 | Nexperia USA... | 0.14 $ | 27368 | DIODE ZENER 47V 500MW SOD... |
BZV55-B27,115 | Nexperia USA... | 0.05 $ | 2500 | DIODE ZENER 27V 500MW SOD... |
BZV55B8V2 L1G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 8.2V 500MW MI... |
BZV55C3V3 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 3.3V 500MW MI... |
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