![BZV55B75 L1G Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | BZV55B75L1G-ND |
Manufacturer Part#: |
BZV55B75 L1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 75V 500MW MINI MELF |
More Detail: | Zener Diode 75V 500mW ±2% Surface Mount Mini MELF |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.01429 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 75V |
Tolerance: | ±2% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 170 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 56V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | Mini MELF |
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A Zener diode is a specific type of diode device which is used with a unique reverse breakdown characteristic, enabling high-voltage regulation while operating in reverse bias. This type of diode is named after Prof. Clarence Zener, the scientist who discovered this behavior. The BZV55B75 L1G (or 1N5225) is a single voltage Zener diode, which is designed for use in a variety of high-voltage applications.
BZV55B75 L1G Application Field
The BZV55B75 L1G is a silicon junction diode with a characteristic PN junction design, which produces an avalanche breakdown effect, allowing it to regulate the voltage across its terminals when exposed to a given reverse voltage. This feature makes it useful for a wide range of applications. It is suitable for use in voltage regulator circuits and for the protection of other semiconductor components from potential damage, due to over-voltage or transient voltage events. It is also commonly used in various telecommunications systems, due to its small physical size, low cost, and high reliability.
BZV55B75 L1G Working Principle
Contrary to traditional diode operation, the BZV55B75 L1G is designed to operate in reverse bias. When the diode is in this state, a small forward current will be applied to the PN junction. This, in turn, establishes a reverse voltage across the device. As the reverse voltage rises, what is called the Zener effect occurs and the Zener diode stops conducting, creating a voltage threshold. This voltage point is known as the Zener voltage. No matter how much current is applied while the diode is in the reverse-bias state, the voltage will not increase above the Zener voltage, therefore providing direct, stable regulation.
If the reverse voltage should rise above the Zener voltage, the diode simply stops conducting and passes almost no current, thereby protecting the circuit from excessive voltage peaks and surges. This can be useful in situations when a known and stable voltage is required, or for protection of other components from potential damage due to excessive voltage levels.
Conclusion
The BZV55B75 L1G is a single voltage Zener diode which is designed for use in a variety of high-voltage applications. Its unique design allows it to operate in reverse bias, thereby providing direct and stable voltage regulation for a variety of applications. Its small size and low cost also make it an ideal choice for many telecommunications systems. The BZV55B75 L1G is a valuable device for a wide variety of applications, from basic voltage regulation to high-voltage protection.
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