BZV55B75 L1G Allicdata Electronics
Allicdata Part #:

BZV55B75L1G-ND

Manufacturer Part#:

BZV55B75 L1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 75V 500MW MINI MELF
More Detail: Zener Diode 75V 500mW ±2% Surface Mount Mini MELF
DataSheet: BZV55B75 L1G datasheetBZV55B75 L1G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01429
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 170 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 56V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Description

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A Zener diode is a specific type of diode device which is used with a unique reverse breakdown characteristic, enabling high-voltage regulation while operating in reverse bias. This type of diode is named after Prof. Clarence Zener, the scientist who discovered this behavior. The BZV55B75 L1G (or 1N5225) is a single voltage Zener diode, which is designed for use in a variety of high-voltage applications.

BZV55B75 L1G Application Field

The BZV55B75 L1G is a silicon junction diode with a characteristic PN junction design, which produces an avalanche breakdown effect, allowing it to regulate the voltage across its terminals when exposed to a given reverse voltage. This feature makes it useful for a wide range of applications. It is suitable for use in voltage regulator circuits and for the protection of other semiconductor components from potential damage, due to over-voltage or transient voltage events. It is also commonly used in various telecommunications systems, due to its small physical size, low cost, and high reliability.

BZV55B75 L1G Working Principle

Contrary to traditional diode operation, the BZV55B75 L1G is designed to operate in reverse bias. When the diode is in this state, a small forward current will be applied to the PN junction. This, in turn, establishes a reverse voltage across the device. As the reverse voltage rises, what is called the Zener effect occurs and the Zener diode stops conducting, creating a voltage threshold. This voltage point is known as the Zener voltage. No matter how much current is applied while the diode is in the reverse-bias state, the voltage will not increase above the Zener voltage, therefore providing direct, stable regulation.

If the reverse voltage should rise above the Zener voltage, the diode simply stops conducting and passes almost no current, thereby protecting the circuit from excessive voltage peaks and surges. This can be useful in situations when a known and stable voltage is required, or for protection of other components from potential damage due to excessive voltage levels.

Conclusion

The BZV55B75 L1G is a single voltage Zener diode which is designed for use in a variety of high-voltage applications. Its unique design allows it to operate in reverse bias, thereby providing direct and stable voltage regulation for a variety of applications. Its small size and low cost also make it an ideal choice for many telecommunications systems. The BZV55B75 L1G is a valuable device for a wide variety of applications, from basic voltage regulation to high-voltage protection.

The specific data is subject to PDF, and the above content is for reference

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