Allicdata Part #: | BZV55C11L0G-ND |
Manufacturer Part#: |
BZV55C11 L0G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 11V 500MW MINI MELF |
More Detail: | Zener Diode 11V 500mW ±5% Surface Mount Mini MELF |
DataSheet: | BZV55C11 L0G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01138 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 11V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 8.2V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | Mini MELF |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A Zener diode, such as the BZV55C11L0G, is a type of diode that works in a reverse breakdown mode. This means that when the voltage across the diode reaches a certain level, a reverse current will flow through the diode, allowing current to flow in both directions. This type of diode has a wide range of applications, from power regulation and voltage clamps, to energy storage devices, to photodetectors.
The BZV55C11L0G has a power dissipation rating of 500mW and is designed for a variety of applications including voltage clamps, voltage references, voltage switching, and other various uses. It is a low-voltage Zener diode with a very high junction capacitance of 35pF, making it ideal for applications where fast switching and high capacitance are needed.
When used as a clamping device, the BZV55C11L0G works by clamping the voltage at a predetermined level. This is achieved by the diode’s breakdown voltage, which is determined by the doping level of the diode. When the voltage across the diode reaches the breakdown level, a reverse current will flow and the voltage will be clamped at a predetermined level, usually the Zener voltage of the diode. This allows the voltage to be clamped, or regulated, at a desired level, which makes it ideal for voltage regulation and voltage switching applications.
The BZV55C11L0G also works in power regulation applications. The diode acts as a low impedance path for current when the forward voltage reaches the Zener voltage level, allowing the current to pass through the diode with minimal resistance. This allows the voltage to be regulated at a set level while still allowing current to flow, which makes it ideal for power regulation applications.
The BZV55C11L0G also works well in energy storage applications, such as storage capacitors and supercapacitors. The diode acts as a low resistance path for current when the voltage reaches the Zener voltage, allowing current to pass through the diode with minimal resistance. This allows the storage capacitor or supercapacitor to maintain a stable voltage level, which makes it ideal for energy storage applications.
The BZV55C11L0G is also an effective photodetector. Its junction capacitance is capable of detecting very small amounts of light, making it ideal for applications such as light switches and light detectors.
In summary, the BZV55C11L0G is a single Zener diode with a wide range of applications. As a low-voltage Zener diode with a high junction capacitance, the BZV55C11L0G is ideal for applications such as voltage clamps, voltage references, voltage switching, power regulation, energy storage, and photodetectors.
The specific data is subject to PDF, and the above content is for reference
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