Allicdata Part #: | BZV55C12L0G-ND |
Manufacturer Part#: |
BZV55C12 L0G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 12V 500MW MINI MELF |
More Detail: | Zener Diode 12V 500mW ±5% Surface Mount Mini MELF |
DataSheet: | BZV55C12 L0G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01138 |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 9.1V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | Mini MELF |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±5% |
Power - Max: | 500mW |
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A BZV55C12 L0G diode is a single Zener diode, one of the most common diodes today. It is a linear polarized PN junction diodes designed for regulating voltage or for protecting application circuits from over-voltage. It has a lower breakdown voltage but higher tolerance than other varieties of Zener diodes.
BZV55C12 L0G is a type of semiconductor diode, which is a two-terminal device with an anode and a cathode. When the diode is forward-biased, a current passes in the direction from anode to the cathode. In contrast, when the diode is reverse-biased, no current passes through it. This unidirectional behavior makes the diode useful for regulating voltage or protecting application circuits from over-voltage.
Most diodes have an anode, which is the most positive side, and a cathode, which is the most negative side. On the BZV55C12 L0G, the anode is identified by the letter A, and the cathode is identified by the letter K. The device is marked with a gray band at the anode end. The gray band indicates that the diode should be connected in the reverse direction for protection from an over-voltage situation.
BZV55C12 L0G diodes have a low breakdown voltage and a high tolerance to over-voltage. The breakdown voltage is the voltage level at which the current between the two terminals increases rapidly. This property of the diode gives it the ability to protect application circuits from overvoltage conditions. This feature also makes BZV55C12 L0G ideal for voltage regulation.
When the diode is reverse-biased, the anode will be connected to a higher potential than the cathode. The diode will break down when the voltage between the anode and the cathode is above the breakdown voltage of the diode. This causes a large current to flow through the diode and a voltage drop across the diode as it is conducting. The voltage drop across the diode will reduce the voltage applied to the application circuit, thus preventing any damage to the components.
The same process occurs when the diode is forward-biased. The diode will break down when the voltage between the anode and the cathode is above the breakdown voltage of the diode. The voltage drop across the diode will limit the voltage applied to the application circuit, thus preventing damage from a high voltage. This is why the BZV55C12 L0G diode is ideal for voltage regulation applications.
The BZV55C12 L0G diode is useful in a variety of applications. It is used in voltage regulation applications, such as voltage transient suppressors, AC adapters, and DC-DC converters. The diode is also used in power management applications such as LED lighting systems, to protect sensitive circuitry from overvoltages and over currents.
In summary, BZV55C12 L0G is a single Zener diode that is designed for regulating voltage or protecting application circuits from over-voltage. It has a low breakdown voltage and a high tolerance to over-voltage. It is used in a variety of applications, including voltage regulation, power management, and LED lighting. With its reverse and forward-bias features, it is a versatile and reliable device at protecting application circuitry from over-voltage.
The specific data is subject to PDF, and the above content is for reference
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