BZV55C4V3 L1G Allicdata Electronics
Allicdata Part #:

BZV55C4V3L1G-ND

Manufacturer Part#:

BZV55C4V3 L1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 4.3V 500MW MINI MELF
More Detail: Zener Diode 4.3V 500mW ±5% Surface Mount Mini MELF
DataSheet: BZV55C4V3 L1G datasheetBZV55C4V3 L1G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01138
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.3V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 75 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A Zener diode is an electronic component, otherwise known as a controlled breakdown diode. This type of diode is designed to handle higher power than an equivalent Si diode and features a voltage-derived regulation ability by breaking down at a specified voltage determined by the manufacturers. The BZV55C4V3 L1G is one of the most popular of the Zener diodes, representing a semiconductor voltage regulator with a breakdown voltage of 4V. It is a single, low-cost and reliable device that ensures the output voltage remains stable despite fluctuations in the input.

The main function of the BZV55C4V3 L1G is to regulate the voltage down and keep it constant. This is useful for electronic components that need to operate within a specific voltage range. To understand the working principles of this diodes, the following aspects have to be taken into account:

Working Principle: The working principle of the BZV55C4V3 L1G is based on the avalanche breakdown effect. When a reverse voltage is applied to the diode, the electrons can escape the forbidden energy band of the valence band and gain enough energy to be injected into the conduction band of the diode. The electrons then create a large number of charges and current starts flowing across the diode. When the current increases to the avalanche breakdown voltage, it triggers a rectification process that regulates the voltage, ensuring the voltage applied across the diode remains constant.

Application Fields: The versatility of the BZV55C4V3 L1G makes it ideal for a variety of application fields. It is used for voltage regulation circuits, as well as in circuits designed to protect electronic components from overvoltage. It is also used as a power regulator to stabilize unpredictable voltage surges, and can be found in medical equipment, automotive electronics, portable electronics, security systems, etc.

Limitations: Despite its versatility, the BZV55C4V3 L1G has some limitations. For example, the current-carrying capability of the diode is low and it is not as efficient as other Zener diodes. It also has a relatively large temperature coefficient and is prone to thermal runaway, thus limiting its usage in some industrial applications.

All in all, the BZV55C4V3 L1G is a reliable and low-cost solution for voltage regulation applications. Its working principle is based on the avalanche breakdown effect and it is often used in a variety of application fields such as medical equipment, automotive electronics, security systems and portable electronics. Despite its limitations, the BZV55C4V3 L1G provides excellent performance in voltage regulation and helps protect electronic components from overvoltage.

The specific data is subject to PDF, and the above content is for reference

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