BZV55C75

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZV55C75 series of Zener diodes, by NXP Semiconductors, is a family of low current, low voltage diodes which are designed for use in space-constrained applications. The diodes feature low temperature coefficient, low reverse leakage and high operating temperature range. The device is capable of withstanding reverse peak pulse current of 100mA.

The BZV55C75 series of Zener diodes are suitable for a wide range of applications such as AC/DC converters, DC-DC converters and signal processing. The device’s low current and low voltage characteristics make it ideal for use in energy-sensitive applications.

The device is designed to operate in a variety of working configurations. It can be used in switch mode power supplies, as a power regulation diode or as a noise or signal static diode. In each configuration, the device achieves its specified operation.

The BZV55C75 series of Zener diodes is available in a variety of packages, including SOT-23, TO-252, 0402 and 0603. The package option allows the user to choose the package that best meets their application requirements.

The working principle of the BZV55C75 series of Zener diodes is quite simple. It is a semiconductor device containing a silicon-based junction that conducts electricity when zener breakdown occurs. When zener breakdown occurs, the diode’s p-n junction conduct electric current in both directions. This electric current causes the voltage at the diode’s junction to remain constant, even if the current is increasing or decreasing. This phenomenon is known as zener breakdown.

The exact breakdown voltage of a BZV55C75 is determined by its application and the specifications of the device. The amount of current the device can draw is limited by its breakdown voltage. For applications where a higher current is required, the device can be used in a series or parallel configuration.

The BZV55C75 series of Zener diodes offers an excellent combination of low forward and reverse current, low current ratings, reverse leakage and high operating temperature range. The device’s low current and low voltage characteristics make it ideal for energy-sensitive applications. The device is also capable of withstanding high reverse peak current pulses for reliable operation in many applications.

The specific data is subject to PDF, and the above content is for reference