| Allicdata Part #: | BZW04-102HR1G-ND |
| Manufacturer Part#: |
BZW04-102HR1G |
| Price: | $ 0.06 |
| Product Category: | Circuit Protection |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | TVS DIODE 102V 165V DO204AL |
| More Detail: | N/A |
| DataSheet: | BZW04-102HR1G Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 10000 +: | $ 0.05178 |
| Voltage - Clamping (Max) @ Ipp: | 165V |
| Supplier Device Package: | DO-204AL (DO-41) |
| Package / Case: | DO-204AL, DO-41, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | Automotive |
| Power Line Protection: | No |
| Power - Peak Pulse: | 400W |
| Current - Peak Pulse (10/1000µs): | 2.4A |
| Series: | Automotive, AEC-Q101, BZW04 |
| Voltage - Breakdown (Min): | 114V |
| Voltage - Reverse Standoff (Typ): | 102V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
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TVS – Diodes are used extensively in the high-voltage industry, and are designed to protect circuit components from voltage surges and transients. The BZW04-102HR1G is a unique type of diode which is used as a transient voltage suppressor. It is designed to protect against high-current surge pulses and a fast response plasma spark gap, providing reliable protection to ensure the integrity of electronic circuitry.
BZW04-102HR1G Application Field
The BZW04-102HR1G is typically used in a variety of industries, including automotive, medical, aerospace, telecommunications, power control and military applications. It is designed for use in high-frequency, high-voltage applications, where its fast response time and superior reliability are essential. The diode is also ideal for trickle charging, short-circuit protection, and for protecting against electrical overstress (EOS) caused by high-speed switching transients and other electrostatic discharge events. It can also be used with many high-speed logic gates, such as those employed in microprocessors.
BZW04-102HR1G Working Principle
The BZW04-102HR1G is a gas-filled diode which contains a fast-acting spark gap. The gas mixture is designed to provide reliable protection from high-voltage spikes, up to 350 Volts. When an overvoltage event occurs, the gas in the gap ionizes and creates a plasma spark which is connected to the cathode of the diode and creates a low resistance path which quickly pulls down the voltage to its normal operating level. The diode then self-recycles, allowing for repeated and reliable operation in the event of successive overvoltage transients.
The BZW04-102HR1G\'s response time is typically less than 50 nanoseconds and allows for much faster suppression than is achievable with mechanical surge-suppression devices. This means it provides better protection from damage due to EOS events - making it an ideal solution for high-speed data transmission applications.
Conclusion
The BZW04-102HR1G is one of the most reliable and efficient diode solutions available for protection against high-voltage surges and transients. It is the ideal choice for high-speed data transmission applications, where its fast response time and superior reliability are essential. The BZW04-102HR1G can also be used for trickle charging, short circuit protection, and for protecting against electrical overstress caused by high-speed switching transients and other electrostatic discharge events. Its fast response time and superior reliability make it an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| BZW04P19HE3/54 | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V DO2... |
| BZW04-37B R1G | Taiwan Semic... | 0.05 $ | 1000 | TVS DIODE 36.8V 59.3V DO2... |
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| BZW04-11 B0G | Taiwan Semic... | 0.05 $ | 1000 | TVS DIODE 11.1V 18.2V DO2... |
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| BZW04-9V4HE3/73 | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 9.4V 15.6V DO20... |
| BZW06-48BRL | STMicroelect... | 0.13 $ | 1000 | TVS DIODE 47.8V 100V DO15 |
| BZW04P33BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 33.3V 53.9V DO2... |
| BZW04-342B R1G | Taiwan Semic... | 0.05 $ | 1000 | TVS DIODE 342V 548V DO204... |
| BZW04-213BHA0G | Taiwan Semic... | 0.05 $ | 1000 | TVS DIODE 213V 344V DO204... |
| BZW04-40 R0G | Taiwan Semic... | 0.05 $ | 1000 | TVS DIODE 40.2V 64.8V DO2... |
| BZW04-5V8HA0G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 5.8V 10.5V DO20... |
| BZW06-342B B0G | Taiwan Semic... | 0.08 $ | 1000 | TVS DIODE 342V 706V DO204... |
| BZW04-10B-E3/54 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 10.2V 16.7V DO2... |
| BZW04-44B-E3/54 | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 43.6V 70.1V DO2... |
| BZW04-10HE3/54 | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 10.2V 16.7V DO2... |
| BZW04-20HE3/54 | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
| BZW04-70B-E3/73 | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 70.1V 113V DO20... |
| BZW04-342-E3/73 | Vishay Semic... | 0.19 $ | 1000 | TVS DIODE 342V 548V DO204... |
| BZW04-213RL | STMicroelect... | 0.11 $ | 1000 | TVS DIODE 231V 344V DO15 |
| BZW06-26B | STMicroelect... | 0.15 $ | 1000 | TVS DIODE 25.6V 53.5V DO1... |
| BZW06-10RL | STMicroelect... | 0.12 $ | 1000 | TVS DIODE 10.2V 21.7V DO1... |
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| BZW04-58B A0G | Taiwan Semic... | 0.05 $ | 1000 | TVS DIODE 58.1V 92V DO204... |
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| BZW06-13 A0G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 12.8V 27.2V DO2... |
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| BZW04-20-E3/73 | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
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BZW04-102HR1G Datasheet/PDF