| Allicdata Part #: | BZW04-342BR1G-ND |
| Manufacturer Part#: |
BZW04-342B R1G |
| Price: | $ 0.05 |
| Product Category: | Circuit Protection |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | TVS DIODE 342V 548V DO204AL |
| More Detail: | N/A |
| DataSheet: | BZW04-342B R1G Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 10000 +: | $ 0.04223 |
| Voltage - Clamping (Max) @ Ipp: | 548V |
| Supplier Device Package: | DO-204AL (DO-41) |
| Package / Case: | DO-204AL, DO-41, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 400W |
| Current - Peak Pulse (10/1000µs): | 750mA |
| Series: | BZW04 |
| Voltage - Breakdown (Min): | 380V |
| Voltage - Reverse Standoff (Typ): | 342V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
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The BZW04-342B R1G is a type of TVS diode which provides high-performance electrostatic protection. This bi-directional diode consists of a Zener and a parasitic bipolar transistor. It is specially designed to guard against voltage transients such as electrostatic discharge (ESD) and electrical fast transients (EFT).
The device has a reverse breakdown voltage of 5V with a reverse leakage current of 10uA at -25°C, and can handle a maximum power of 400mW. It is usually constructed from a low-cost material such as silicon, allowing for a small size and a high reliability, compared to other existing Electronic Device Protection solutions.
The BZW04-342B R1G is suitable for use in a variety of applications ranging from consumer electronics, automotive electronics, and industrial electronic components. It can also be used to protect against voltage spikes generated in I/O lines from mobile phones, notebooks, computers, printers, and modems.
The main function of the BZW04-342B R1G is to absorb and dissipate the energy generated by an ESD pulse. During an ESD pulse, the diode will enter its breakdown region and become reverse-biased. The resistance of the diode will increase until the current is limited by the internal Zener structure, and a voltage clamp will be created. This will protect sensitive components from overvoltage damage.
In addition, the diode can also be used for I/O line protection. During normal operation, the diode behaves as a high impedance attenuator, and it allows for signal integrity. When transient voltages are applied, the diode enters its breakdown region and it cooperates with the parasitic bipolar transistor to create a low impedance path, shunt the transient away from the device, and limit the excess voltage applied to the protected component or device.
The BZW04-342B R1G is an effective solution for providing ESD and I/O line protection in a variety of applications. Due to its low-cost, high-reliability and small size, it is the preferred solution for many designers. It is widely used in the consumer electronics, automotive and industrial electronic components, as well as the mobile phones, notebooks, computers, printers and modems.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| BZW04-342B R1G | Taiwan Semic... | 0.05 $ | 1000 | TVS DIODE 342V 548V DO204... |
| BZW04-213BHA0G | Taiwan Semic... | 0.05 $ | 1000 | TVS DIODE 213V 344V DO204... |
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| BZW04-70B-E3/73 | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 70.1V 113V DO20... |
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BZW04-342B R1G Datasheet/PDF