BZW50-100B Circuit Protection

TVS - Diodes

BZW50-100B Application Field and Working Principle

The BZW50-100B is a bidirectional transient voltage suppressor (TVS) diode, which protects various electronics and data lines from voltage surges and electrostatic discharge (ESD). It is suitable for various field such as telecommunications, consumer electronics, industrial, automotive, and aerospace applications.

This diode is constructed by a PN junction surrounded by a dielectric material. The central PN junction is normally forward biased which acts as a semiconductor rectifier. The dielectric material around the PN junction provides the electrical isolation between the positive and negative sides of the diode.

When a voltage surge occurs across the diode, the junction starts to reverse bias, resulting in an increase in the current through the diode. The increased current reaches a certain level that makes it possible to produce sufficient heat for melting the dielectric material and isolating the PN junction from the applied voltages. This process is known as the avalanche breakdown. The avalanche breakdown can dissipate enough energy to protect the electronics and data lines from overvoltage.

The BZW50-100B is designed to be applied with a standoff voltage of 50V to 100V. It has a low capacitance of 6 pF and a very good dV/dt performance of 600V/ns. Moreover, this diode has an extremely low leakage current of 0.1 mA, a very high response speed of 70 ns, and a fast clamping voltage of 62V.

In summary, the BZW50-100B is an excellent solution for overvoltage protection due to its superior performance, easy application, and cost-effectiveness. It provides reliable overvoltage protection for various electronics and data lines with its low-capacitance, fast response time, and low leakage current.