CAT24C16HU4I-GT3JN

CAT24C16HU4I-GT3JN is a type of memory which belongs to the non-volatile EEPROM/Flash memory ICs family. It supports a supply voltage range of 2.7V to 5.5V allowing robust operations over variable temperatures. Low voltage operation makes it optimal for portable or battery powered applications. The device can deliver a continuous data read/write speed of 2.5MHz, making it uniquely suitable for applications with real time constraints.

The major application field of CAT24C16HU4I-GT3JN is non-volatile memory usage. This memory can be used to store long term data such as configuration parameters, and it can be used to store volatile programs such as bootloader, etc. The device is typically used in embedded systems that require secure, long-term data storage, such as electronic meters, modems, communications systems, and industrial operating instruments, etc.

The working principle behind the CAT24C16HU4I-GT3JN is based on a proprietary self-timed write and read pulse architecture. This is a single byte device with proprietary auto address incrementing, making addressing very flexible. It can store 256 byte of user data and has the capability of retaining the data at power-up. The device performs both random and sequential read/write operations with an access time of 2.5MHz. The device is available in 8-pin plastic SOIC package and it is in-system programmable via a serial interface using I2C protocol.

The write and read operations of the CAT24C16HU4I-GT3JN are initiated by the I2C protocol. The write enable and hold pin completes the write enable sequence that is initiated by the I2C protocol. The write cycle consists of the following operations, data write pulse, address write pulse and the hold pulse. The write enable and hold pulses are generated using the I2C protocol. The data write pulse is generated by driving the Vdd pin to a high state and the address write pulse is generated by driving the Vpp pin to a high state. After all the data has been written, the write enable and hold pulses are de-asserted.

The read operation of the CAT24C16HU4I-GT3JN consists of the following operations, address write pulse, data read pulse and the hold pulse. The address write pulse is generated by driving the Vdd pin to a high state and the data read pulse is generated by driving the Vpp pin to a low voltage state. After address write and data read pulses have been generated, the device will hold during the read cycle. After the read cycle is completed, the hold pulse is de-asserted. It is important to note that the device must have power during the read cycle to ensure that the read operation is successful.

CAT24C16HU4I-GT3JN is a low cost, low power non-volatile memory device which is ideal for applications requiring secure storage of long-term data. It provides an easy to use interface to access the 256 bytes of data it holds, making it ideal for embedded applications. The device is available in an 8-pin plastic SOIC package and is in-system programmable via I2C protocol.