CAT25160YI-GT3JN Allicdata Electronics
Allicdata Part #:

CAT25160YI-GT3JN-ND

Manufacturer Part#:

CAT25160YI-GT3JN

Price: $ 0.22
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EEPROM 16K SPI 20MHZ 8TSSOP
More Detail: EEPROM Memory IC 16Kb (2K x 8) SPI 20MHz 8-TSSOP
DataSheet: CAT25160YI-GT3JN datasheetCAT25160YI-GT3JN Datasheet/PDF
Quantity: 1000
3000 +: $ 0.19909
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: CAT25160
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CAT25160YI-GT3JN is a serial non-volatile memory and a system component used in a variety of electronic devices, making it the workhorse of the memory world. Used in computing, the CAT25160YI-GT3JN enables quick and efficient storage of data, allowing for fast access, efficient storage and powerful packaging.

The most common application of the CAT25160YI-GT3JN is in computers, where it is mainly used as a storage component for data as well as for system firmware. This helps the user to keep working without having to reboot or power cycle the whole system. By utilizing the memory component, a computer can access its stored information much faster, reducing waiting times and boosting overall performance.

The CAT25160YI-GT3JN is a Common Flash Memory Interface (CFMI) device and operates on the same principles as many common NAND flashes. It uses an array of floating gate cells to store the data, using high voltages and memory cells that are depleted or floating gate. NAND flash is the most widely used storage technology because of its reliability, durability and small size, allowing many devices to store more information without taking up large amounts of space.

The working principle of the CAT25160YI-GT3JN is quite simple. Essentially, the device uses an array of floating gate cells to store the data, which is stored on layers of silicon nitride between a substrate and gate oxide. When an electrical current is applied to the cell, electrons are able to flow between the gate oxide and the substrate, which creates a charge between the two materials. This charge is then used to store data on the cells.

The charge on each cell is read by the system’s processor, which is able to differentiate between a “1” or a “0”. This data can be stored on the device as either a sequence or a number and can easily be accessed or manipulated by the processor.

The CAT25160YI-GT3JN is widely used in computers for storage of data, as well as for system firmware. The device is also becoming increasingly popular in other electronic devices such as cameras, digital music players, GPS systems and many more. thanks to its reliability, durability and small size. As the capabilities of these devices become larger and more complex, the need for efficient storage solutions is becoming ever more important - making the CAT25160YI-GT3JN an essential component.

The specific data is subject to PDF, and the above content is for reference

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