CAT25160HU4I-GT3

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The CAt25160HU4I-GT3 is a memory integrated circuit which is manufactured by On Semiconductor Corporation. It provides a reliable, low power storage solution for embedded applications. This device provides non-volatile Flash Memory for up to 4K bits of user data.

The CAt25160HU4I-GT3 memory has several versatile applications in a wide range of innovative products. It can be used for embedded systems, consumer electronics, automotive products and many other applications. It can be used for storing the system\'s configuration data, application parameters, sensor data, and more. It can also be used for coding user-defined data such as passwords, numerical codes, and serial numbers. Additionally, it can be used for application specific algorithms such as temperature compensation, filtering and control algorithms.

The CAt25160HU4I-GT3 memory provides up to 4K bits of storage capacity and operates at Low Voltage (2.5 or 3.3 volts). It supports a wide variety of memory operations, with a maximum operating frequency of 20MHz. It has an on-chip read/write oscillator, which allows for clock synchronization between the host processor and the memory device. This device also features Maximum Endurance and High Temperature Operation, which make it suitable for tough applications.

The CAt25160HU4I-GT3 memory works on the principle of non-volatile memory technology. It is based on planar Floating Gate Non-Volatile Semiconductor Memory technology with Charge Pump operation. This device stores each bit in a different location of a thin-film transistor array that covers an area of the chip. This is accomplished by using Fowler-Nordheim tunneling to inject hot electrons into the embedded floating gate. The data is retained as long as power is applied to the chip and will be retained when power is turned off.

The CAt25160HU4I-GT3 memory can be programmed and erased with a minimum of 10K electrons per bit. It also has two-level write protection and automatic data-retention circuitry which ensures that the data stored in the memory does not get corrupted. It is also protected from short circuit, Electrostatic Discharge (ESD) and other hard failures.

The CAt25160HU4I-GT3 memory supports 10mA maximum write current and 150 μ A maximum read current from a single pin. It also offers industry leadingUltra-Low Operating Voltage (1.6V typical) for improved performance and power efficiency. Additionally, the device is pin-compatible with previous generations to increase design scalability.

The CAt25160HU4I-GT3 memory is one of the most popular memory solutions currently available in the market. It is robust and reliable and is suitable for a wide range of applications. Its Non-Volatile Memory technology ensures data integrity while its low power operation ensures it is suitable for battery-powered devices. Thanks to its advanced features and versatile application fields, the CAt25160HU4I-GT3 memory is preferred by many embedded designers.

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