CAT24M01YI-GT3JN

CAT24M01YI-GT3JN is a 1Mb serial CMOS EEPROM that belongs to the Memory category. It is a device based on Micron’s™ 256Kb process technology and is designed to provide an ideal storage solution for data logging, system configuration, user information, and other non-volatile data storage applications.

Application Field

The CAT24M01YI-GT3JN is an ideal device for many applications, including industrial automation, medical devices, PCs and laptops, communications equipment, office equipment, and consumer electronics. Its wide range of features makes it suitable for a variety of applications, such as configuration data, user data, and data logging.

It is especially suited for applications that require low power consumption, long operational life, and protection against data corruption. Its power-saving Standby Mode allows the device to enter a low-power state when not in use, which can reduce power consumption and extend battery life.

The CAT24M01YI-GT3JN is an excellent choice for applications that require reliable data storage and rapid access times. Its low current consumption and high speed make it ideal for memory density increases, real-time data logging, and firmware upgrades.

The CAT24M01YI-GT3JN also provides protection against data corruption through its tumbling function. This feature allows data to be written to the device in predetermined intervals. If the device is not accessed within the specified time period, the data is reset to its original state.

Working Principle

The CAT24M01YI-GT3JN consists of a single-die CMOS chip, which is fabricated using Micron’s 256Kb process technology. This chip contains all the necessary logic, data storage, and control components.

The chip is divided into eight memory arrays. Each array contains 16Kb of memory, which is organized as a matrix of individual bits. All of these arrays are connected to a controller, which is responsible for managing the entire operation of the chip.

The controller uses a write control sequence that ensures data is written securely and safely to the EEPROM. The write-control sequence is initiated by a write signal, which is generated by an external circuit. The write signal is used to initiate the write-control sequence, which consists of the following steps:

1. A write enable signal is sent from the controller to the memory array to indicate that the write process has begun.
2. A data byte is sent from the write signal to the memory array.
3. The data byte is latched into the memory array.
4. The data byte is encoded and stored in the correct address location.
5. A write disable signal is sent from the controller to the memory array to indicate that the write process has ended.

Once the write process is complete, the data is stored in the EEPROM and can be accessed at any time. The CAT24M01YI-GT3JN also offers two levels of protection against data corruption: First, the tumbling function periodically refreshes data in the memory array. Second, the write control sequence ensures that data is not overwritten without user consent.

The CAT24M01YI-GT3JN is a highly versatile memory device that can be used in a wide range of applications. Its low power consumption, long life, and protection against data corruption make it an ideal choice for both portable and non-portable applications.