CAT28C16AWI-12T

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory technology is an essential, ubiquitous component that forms the backbone of all modern computing platforms. From low-cost, dedicated memory ICs to high-performance, multi-chip solutions, memory comes in many forms and sizes, but all have one thing in common: they are all built on a foundation of solid, reliable semiconductor technology. The CAT28C16AWI-12T memory IC is a great example of this kind of reliable semiconductor technology, offering a robust, reliable solution for applications where uptime and data integrity are critical.

The CAT28C16AWI-12T is a 16K bit (2K byte) Electrically-Erasable Programmable Read-Only Memory (EEPROM) that utilizes a floating-gate technology to create a highly reliable, non-volatile memory solution. The CAT28C16AWI-12T features an automated write protection and low current write operations, making it ideal for applications where data protection and low-power are important factors. The CAT28C16AWI-12T also offers a wide operating temperature range, from -40 to +85 degrees Celsius, helping to ensure reliable operation in a variety of environmental conditions. The CAT28C16AWI-12T also provides a low-voltage operation of 1.8 to 6.5V, making it suitable for a variety of applications.

The CAT28C16AWI-12T has many features that make it an ideal memory solution for a variety of applications. The non-volatile memory cell of the CAT28C16AWI-12T is designed to retain data even with power off and offers 10-year data retention and 10’s of thousands write/erase cycles. The CAT28C16AWI-12T is designed to offer a wide application field and is suitable for automotive, consumer, industrial and commercial applications. It is also ideal for data logging and code download applications, making it a great solution for a variety of applications.

The CAT28C16AWI-12T working principle is built on a few principles that make up the basis of digital memory device circuitries. First, the memory cell is composed of a Gate and a Floating Gate, and the charge on the Floating Gate determines its logic state. The Gate of the memory cell is coupled to a high impedance device, such as a transistor, to connect it to the control circuitry. The control circuitry uses a combination of write, read and erase operations to modify the state of the memory cell.

The write operation of the CAT28C16AWI-12T begins with applying an electrical write voltage to the Control Gate of the Memory Cell. The charge applied to the Floating Gate is then transferred to switched in a controlled manner. Once the write is completed, the State of the Memory Cell is modified and the logic state of the Cell reflects the programming data. The read operation of the CAT28C16AWI-12T involves applying an electrical read voltage to the Control Gate and sensing the resulting current. The current can be monitored to determine the logic state of the Memory Cell.

The erase operation of the CAT28C16AWI-12T utilizes Fowler–Nordheim tunneling to remove the charge from the Floating Gate. The erase of the Memory Cell is accomplished by applying an electrical erase voltage to the Control Gate, which then causes electrons to tunnel through the insulating oxide layer toward the Floating Gate, removing the charge from the Cell. This process of tunneling also creates a Fowler–Nordheim erase window, which can be used to ensure that the erase has been completed.

The CAT28C16AWI-12T memory IC is an ideal solution for a variety of applications offering robust, reliable operation along with features such as low power write and erase operations and a wide operating temperature range. The CAT28C16AWI-12T also has the added benefit of a non-volatile design that ensures reliable data retention even with power off, making it an excellent choice for applications where data protection, reliability and performance are all key factors.

The specific data is subject to PDF, and the above content is for reference