CDBA120L-G Allicdata Electronics
Allicdata Part #:

CDBA120L-G-ND

Manufacturer Part#:

CDBA120L-G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: DIODE SCHOTTKY 20V 1A DO214AC
More Detail: Diode Schottky 20V 1A Surface Mount DO-214AC (SMA)
DataSheet: CDBA120L-G datasheetCDBA120L-G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 380mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 125°C (Max)
Base Part Number: CDBA120
Description

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A diode rectifier is a device that converts AC voltage and current into DC voltage and current. It is one of the most common components in electronic circuits. The CDBA120L-G is a single diode rectifier that can be used for both low and high power applications. In this article, we will look at the application field and working principle of the CDBA120L-G.

The CDBA120L-G is a single diode rectifier designed specifically for high power applications. It has a rated current of 120A and a reverse voltage of 200V. The device is capable of providing a fast, reliable and efficient conversion of AC to DC. It is also capable of suppressing negative spikes and harmonics to reduce power loss. The device has an excellent power density and a high efficiency factor of 95%. This makes it ideal for use in automotive, industrial and telecom applications.

The working principle of the CDBA120L-G diode rectifier is based on the operation of a p-n junction diode. The device is composed of a p-type semiconductor and an n-type semiconductor. During a forward bias, the p-type semiconductor is positively charged and the n-type semiconductor is negatively charged. This causes a depletion region to form at the junction of the two materials, allowing current to flow in one direction. During a reverse bias, the junction is blocked, preventing current from flowing in the reverse direction. This is the basic principle of operation of a p-n junction diode.

The CDBA120L-G is a high power, fast switching diode rectifier that is suitable for various applications. It has a low forward voltage drop of 1.3V and a high reverse operating voltage of 200V. It also has a high peak dynamic temperature range of up to 150°C, making it suitable for automotive and other high temperature applications. It has a low forward current leakage of 10µA and a high reverse diode leakage of 20mA. This ensures that no additional current is leaked through the device during operation.

In conclusion, the CDBA120L-G is a single diode rectifier that is designed for use in high power applications. It has a rated current of 120A and a reverse voltage of 200V. The device has an excellent power density and a high efficiency factor of 95%. It has a low forward voltage drop of 1.3V and a high reverse operating voltage of 200V. The device also has a high peak dynamic temperature range of up to 150°C, making it suitable for automotive and other high temperature applications. Finally, the device has a low forward current leakage of 10µA and a high reverse diode leakage of 20mA, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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