Allicdata Part #: | CLF1G0035-200PU-ND |
Manufacturer Part#: |
CLF1G0035-200PU |
Price: | $ 332.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET 50V 11DB SOT1228A |
More Detail: | RF Mosfet |
DataSheet: | CLF1G0035-200PU Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 302.43600 |
Specifications
Series: | -- |
Packaging: | -- |
Part Status: | Active |
Transistor Type: | -- |
Frequency: | -- |
Gain: | -- |
Current Rating: | -- |
Noise Figure: | -- |
Power - Output: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
Base Part Number: | CLF1G0035 |
Description
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CLF1G0035-200PU is a type of RF MOSFET that can be used for many different applications. It was developed by the Chinese company Intersil and has proven to be one of the best performing and most reliable RF MOSFETs on the market.RF MOSFETs are components that help control the flow of electricity in radio-frequency (RF) applications. They are typically divided into four categories: amplifier devices, switch designs, enhanced non-linear models, and high-power RF devices. The CLF1G0035-200PU belongs to the amplifier devices category. The CLF1G0035-200PU is an advanced n-channel enhancement mode MOSFET with a max operating voltage of 200 Volts and a drain current of 35 Amps. It has a gate-source voltage of +/- 12 volts and a maximum junction temperature of 175°C. It was designed to be used in RF power amplifiers, low-noise amplifiers, and other RF applications.The CLF1G0035-200PU offers a number of advantages over other MOSFETs. It provides very low noise, excellent power density, fast switching, low current consumption, and good thermal performance. It is also capable of operating at very high temperatures without degrading its performance.The working principle of the CLF1G0035-200PU is based on the principle of metal-oxide-semiconductor field-effect transistors, or MOSFETs. Basically, the device consists of a metal electrode that is connected to a semiconductor material. When a voltage is applied between the metal electrode and the semiconductor material, a current will flow through the device. The amount of current that flows through the device is determined by the amount of voltage applied between the metal and the semiconductor material.The key benefit of the CLF1G0035-200PU is that it can provide high power outputs while still being able to operate at very low voltage levels. This allows it to be used in a variety of different applications, including radio transmitters and other power amplifiers. It is also capable of providing very high-fidelity sound in audio applications.In conclusion, the CLF1G0035-200PU is a highly reliable and efficient RF MOSFET with a wide range of applications. It can provide low-power outputs for low-voltage applications or high-power outputs for high-voltage applications. Its combination of fast switching, low current consumption, excellent power densities, and low noise makes it an ideal choice for a variety of RF applications.The specific data is subject to PDF, and the above content is for reference
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