Allicdata Part #: | CM15TF-24H-ND |
Manufacturer Part#: |
CM15TF-24H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | IGBT MOD 6PAC 1200V 15A H SER |
More Detail: | IGBT Module Three Phase Inverter 1200V 15A 150W C... |
DataSheet: | CM15TF-24H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | IGBTMOD™ |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 15A |
Power - Max: | 150W |
Vce(on) (Max) @ Vge, Ic: | 3.4V @ 15V, 15A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 3nF @ 10V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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CM15TF-24H Application Field and Working Principle
CM15TF-24H is a type of insulated gate bipolar transistor (IGBT) module applied to high power switch applications. These devices are effectively used in power transmission and conversion systems like motor control and welders. The versatility of the application is also extended by readily available evaluation boards, which can be implemented in other applications like inverters.
IGBT, like other semiconductor devices, is a three-terminal device consisting of an emitter (E), collector (C) and gate (G).IGBT has a majority charge carrier conduction of electrons and a minority charge carrier conduction of holes. Therefore, it is essentially an insulated version of bipolar junction transistor (BJT).
The advantage of IGBT is its superior switching performance, which is significantly improved compared to the BJT. This is due to its insulated gate, usually fabricated from highly resistive silicon dioxide. This layer of silicon dioxide is able to reduce the gate current, while maintaining the voltage that is necessary to switch the device on and off. When the gate is kept at a negative voltage with respect to the emitter, a sufficient amount of electrons are collected, forming an inversion layer that provides a conductive pathway between the emitter and collector.
The CM15TF-24H is a module that combines a reverse-connected diode parallel with an insulated gate bipolar transistor. It mainly uses IGBTs with a maximum current of 15A, and includes typical protection functions such as over-current protection, under-voltage protection, short-circuit protection and temperature protection. It also has a built-in over-voltage clamp circuit and pre-charging circuit that can control the module\'s output voltage and fault current levels.
In summary, the CM15TF-24H module is designed for high power switch applications. It is able to switch voltages up to 24V and current up to 15A. This makes it suitable for applications such as motor control, welders and inverters. The inclusion of protection functions, as well as its ability to set optimal circuit conditions, makes the device highly practical and versatile.
The specific data is subject to PDF, and the above content is for reference
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