CM150RL-24NF Allicdata Electronics
Allicdata Part #:

CM150RL-24NF-ND

Manufacturer Part#:

CM150RL-24NF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: IGBT MOD 7PAC 1200V 150A NF SER
More Detail: IGBT Module Three Phase Inverter with Brake 1200V...
DataSheet: CM150RL-24NF datasheetCM150RL-24NF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: IGBTMOD™
Part Status: Obsolete
IGBT Type: --
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 890W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 23nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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CM150RL-24NF is one of the most commonly used transistors, mainly used in industrial products. It belongs to the family of insulated gate bipolar transistor (IGBT) modules. This article introduces the application field and working principle of the CM150RL-24NF.

Application Field of CM150RL-24NF

The CM150RL-24NF transistor is mainly used in power supply products, such as switching power supplies, computer power supplies, and high-voltage power supplies. It can be used as a loading switch element. This IGBT module is usually applied in such high-power AC or DC machines and circuits, like motor drives, welders, and soft starters.

Due to its versatile performance, the CM150RL-24NF is also widely used in non-motor control and rectification fields. This rugged package ensures the module can withstand harsh environment or hazardous condition. The inherently low on-state loss, coupled with fast switching speed, makes this IGBT module an ideal choice for adjustable speed drives and induction heating.

Working Principle of CM150RL-24NF

The CM150RL-24NF transistor is an IGBT module that combines two unipolar switching elements: an N-channel depletion-mode MOSFET and a P-channel enhancement-mode MOSFET. As a voltage is applied to the gate, the N-channel MOSFET starts conducting current. When the voltage drops to zero, the conduction state stops.

CM150RL-24NF consists of an insulated electric field gate with a sharp breakdown voltage. This gate allows the electric field to remove electrons from the field and activates the n-channel MOSFET. An internal electric base resistor connects between gate and emitter when the voltage is applied to the gate. It reduces the gate current and avoids false trigger during switching state.

In addition, the Trench-gate-Emitter structure and advanced process technologies of this IGBT module ensure low on-state losses, high frequency operation, and high input impedance. When the IGBT module is operated at normal conditions, the short circuit capability and system reliability can be improved significantly.

In summary, CM150RL-24NF are cost-effective solutions for applications that demand high switching frequencies, low on-state losses, and low operating temperature. With its quick switching speed, high circuit efficiency, and rugged package, the CM150RL-24NF is often the preferred choice for industrial power applications.

The specific data is subject to PDF, and the above content is for reference

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