CM150DY-34A

Series:	IGBTMOD™
Part Status:	Discontinued at Digi-Key
IGBT Type:	--
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1700V
Current - Collector (Ic) (Max):	150A
Power - Max:	1600W
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 150A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	37nF @ 10V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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The CM150DY-34A is an insulated gate bipolar transistor module manufactured by Mitsubishi Electric Corporation. This module is mainly used in industrial applications, such as motor control and power supply circuit switching. It has a Vce of 1800 V, Ic rating of 183 A, and a rated current of 300 A. The CM150DY-34A is a high power module with a durable and reliable construction, making it ideal for a wide array of applications.

The insulated gate bipolar transistor (IGBT) is a type of transistor that combines features of both bipolar junction transistors and insulated gate transistors. The IGBT combines the benefits of both transistors, allowing it to switch large currents at high frequencies with low power loss. As a result, IGBTs are very efficient and reliable switches. They are also relatively inexpensive and have a long lifetime, further fueling their popularity in the industry.

The CM150DY-34A IGBT module is a high-power module, meaning it is capable of handling high power applications. The module is designed with a durable and reliable construction, which allows it to withstand extreme operating conditions. The CM150DY-34A is also very efficient, boasting a low power loss of 0.082 W/cm2 at a Vce of 1800 V and an Ic rating of 183 A.

The working principle of an IGBT module is fairly simple. The module consists of an N-type silicon substrate layer, surrounded by an N-type doping layer. An insulated gate is then applied to the structure, allowing voltage to be applied to the gate when needed. This causes the gate to conduct, allowing current to flow between the source and the drain. The gate voltage also keeps the junction between the N-type substrate and the N-type doping layer at a low voltage, thus preventing current from flowing without the need for an extra control circuit. By controlling the gate voltage, the CM150DY-34A IGBT module can rapidly switch on and off.

The CM150DY-34A IGBT module can be used in a variety of applications, including motor control and power supply circuit switching. The module is particularly useful in high power applications due to its high efficiency and durable construction. It is also relatively inexpensive and has a long lifetime, further making it an ideal choice for industrial applications. As a result, the CM150DY-34A IGBT module is gaining attention in the industrial sector and is likely to remain a popular choice for many years to come.

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