CM150TU-12F Allicdata Electronics
Allicdata Part #:

CM150TU-12F-ND

Manufacturer Part#:

CM150TU-12F

Price: $ 158.97
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: IGBT MOD 6PAC 600V 150A F SER
More Detail: IGBT Module Trench Three Phase Inverter 600V 150A ...
DataSheet: CM150TU-12F datasheetCM150TU-12F Datasheet/PDF
Quantity: 1000
10 +: $ 144.51600
Stock 1000Can Ship Immediately
$ 158.97
Specifications
Series: IGBTMOD™
Part Status: Active
IGBT Type: Trench
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 150A
Power - Max: 520W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 41nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CM150TU-12F is a type of insulated gate bipolar transistor (IGBT) module. It is typically used to control and convert the electric current and voltage in various applications. This type of transistor module works by utilizing an insulated gate (field-effect gate) to control the voltage. The insulated gate is used to modulate the collector current between two opposite voltage polarities, allowing for efficient switching and control of the electric current.

The CM150TU-12F has an overall power rating of 150A, a peak current rating of 150A, a collector emitter maximum voltage rating of 1200V, and a gate emitter maximum voltage rating of 20V. This makes it suitable for use in high current, high voltage applications. Some of the most common applications of this module are motor control, electric and power transmission/distribution, electric vehicle charging/discharging, and high power switching applications. It can also be used in off-grid applications such as solar and wind energy.

The main working principle of the CM150TU-12F is the use of high current and control provided by the insulated gate bipolar junction transistor. The device works by combining two transistors - an n-type and a p-type. The n-type has an insulated gate connected to the base of the p-type, allowing for the control of the current flow. This in turn allows for efficient control and switch of voltage and current when the insulated gate is switched on and off. This makes the CM150TU-12F ideal for high power and high current applications.

Overall, the CM150TU-12F is a highly efficient and reliable IGBT module. It is ideal for various applications such as motor control, high power switching, electric and power transmission/distribution, electric vehicle charging/discharging, and off-grid applications such as solar and wind energy. It is designed to have a high power rating of 150A and a peak current rating of 150A, making it suitable for use in high current, high voltage applications.

The specific data is subject to PDF, and the above content is for reference

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