Allicdata Part #: | CM150DU-12F-ND |
Manufacturer Part#: |
CM150DU-12F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | IGBT MOD DUAL 600V 150A F SER |
More Detail: | IGBT Module Trench Half Bridge 600V 150A 520W Chas... |
DataSheet: | CM150DU-12F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | IGBTMOD™ |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | Trench |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 520W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 150A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 41nF @ 10V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CM150DU-12F is an insulated gate bipolar transistor (IGBT) module engineered with a thin baseplate, slim-packaging and low inductance design that make it ideal for power supply and automotive inverter use. It is a field-effect controlled power transistor that delivers superior performance regardless of the environment’s temperature levels. This economical design offers reliable switching performance and excellent thermal characteristics. This is due to its low baseplate thermal resistance, thin-film structure and fast switching speed.
The CM150DU-12F was designed to operate at a maximum voltage of 1200 volts and current of 150 amps with a collector power dissipation up to 1500W. This module is semi-conducting material and does not require any intricate accompanying components. It is an efficient and low power-loss option for these applications. This is due to its low forward voltage, reverse recovery time and moderate input and output capacitance.
The CM150DU-12F is also exceptionally reliable and suitable for use in many industrial and automotive applications. This device requires no external components and can be connected to the power source with a single twist. Its construction allows it to protect itself against short-circuits and overload conditions. This device is also used in other applications such as motor drives, generators, rectifiers, converters and solar systems.
The working principle of the CM150DU-12F is fairly simple. This type of insulated gate bipolar transistors use self-biased transistors or two-terminal devices to regulate the current level. The opening and closing of the gate creates an electric field which in turn controls the flow of current. This electric field is usually created by applying a voltage to the gate. The current flow is then regulated using low-voltage levels.
The CM150DU-12F has many application fields and its working principle is quite simple. This device offers great performance in both industrial and automotive applications. It is reliable, efficient and low-power loss. Its construction allows it to protect itself against short-circuits and overload conditions while offering superior performance regardless of the temperature. This device is an ideal option for a wide range of applications including motor drives, generators, rectifiers, converters and solar systems.
The specific data is subject to PDF, and the above content is for reference
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