CM600DU-5F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - IGBTs - Modules

CM600DU-5F is a new generation insulated gate bipolar transistor (IGBT) module developed by Fuji Electric Co., Ltd. in Japan. It consists of three IGBTs and a diode chip sealed in a package of insulated pressed resin material. This module has functions such as soft switching, minimized switching loss, soft corner anti-parallel diode, high temperature operating insulation and low collector-emitter leakage current.

Application Field

CM600DU-5F IGBT module is mainly used in applications such as adjustable speed drive systems, frequency conversion, inverter and so on. It has the advantages of high operating frequency, wide speed range, wide input voltage range, high switching speed and low power losses.

Working Principle

The IGBT module is a three-terminal semiconductor device, providing a fast turn-on and turn-off switching device enabling high-performance operation. It consists of three n-channel FETs in a cascode configuration, a trench gate structure and a diode connected between the cathode and the collector. The chip is then hermetically sealed in a resin-filled package for insulation and protection.

When the gate voltage of the IGBT module is below the threshold voltage Vth, the N-channel FET is turned off, thus blocking current from flowing between the collector and the emitter. When the gate voltage exceeds the threshold voltage Vth, it turns on the N-channel FET, enabling current to flow between the collector and the emitter through the N-channel FET. The same voltage is applied to the diode so that it is biased and in turn, it conducts current when the base-emitter junction of the IGBT is in the reverse bias state.

The newly developed CM600DU-5F IGBT module has the increased trench gate structure, which provides the optimized reverse conducting ability (di/dt) and low voltage drop. In addition, it has the decreased collector-emitter leakage current (tic) for high temperature operating.

The specific data is subject to PDF, and the above content is for reference