Allicdata Part #: | 835-1153-ND |
Manufacturer Part#: |
CM600DX-24S1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | IGBT MOD NX 600A 1200V DUAL |
More Detail: | IGBT Module Half Bridge 1200V 600A 3330W Module |
DataSheet: | CM600DX-24S1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 600A |
Power - Max: | 3330W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 600A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 50nF @ 10V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CM600DX-24S1 is one of the most versatile IGBT Modules available in the market. It is ideal for use in applications, where high-speed switching, higher power loss and complex switching strategies are required. It is suitable for use in a variety of applications such as industrial machinery, automotive and consumer electronics.
The IGBT Modules incorporated in the CM600DX-24S1 are very robust and offer a maximum current rating of 600A. The devices in the module are capable of switching high power and voltage with minimal losses, while ensuring reliability and safety. The module is also designed to be easily integrated into existing system architectures.
One of the main applications of the CM600DX-24S1 is in high power inverter systems. This is because the module is designed to provide consistent switching performance at higher power levels and better efficiency. In addition, the module is specially designed to provide a fast rise time of up to 50 ns and can be used for high-density switching applications.
The working principle of the CM600DX-24S1 is based on the principle of a metal-oxide-semiconductor structure. This structure is composed of an insulated gate and a thin layer of semi-insulating material on the top and bottom. When an electric potential is applied to the gate, it causes a change in the electrical resistance of the path. This in turn causes the electrons to be moved from the n-type channel in the material towards the p-type region. As the electrons flow through this area, they create a current, which is referred to as a “charge”.
In addition, the CM600DX-24S1 is designed to be used as part of a power management system. The module is designed to meet the needs of high power applications and provides excellent power regulation and switching performance. This means that the module can be used to effectively manage the operation of digital and analog systems in the same system architecture.
Finally, the CM600DX-24S1 is an ideal solution for high-end applications that require robust and reliable switching performance. It is also suitable for critical applications such as motor control, lighting control and process control. Additionally, the IGBT modules in the module are designed to be compatible with other IGBT modules in the same system, allowing for easier integration.
The specific data is subject to PDF, and the above content is for reference
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