CM600HA-5F Allicdata Electronics
Allicdata Part #:

CM600HA-5F-ND

Manufacturer Part#:

CM600HA-5F

Price: $ 139.83
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: IGBT MOD SGL 250V 600A F SER
More Detail: IGBT Module Trench Single 250V 600A 960W Chassis M...
DataSheet: CM600HA-5F datasheetCM600HA-5F Datasheet/PDF
Quantity: 1000
10 +: $ 127.10800
Stock 1000Can Ship Immediately
$ 139.83
Specifications
Series: IGBTMOD™
Part Status: Active
IGBT Type: Trench
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 250V
Current - Collector (Ic) (Max): 600A
Power - Max: 960W
Vce(on) (Max) @ Vge, Ic: 1.7V @ 10V, 600A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 165nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CM600HA-5F application field and working principle

The CM600HA-5F is a transistor module from Mitsubishi Electric, a leading manufacturer in power and circuit protection components. It is a high speed, low loss IGBT module designed for use in power applications such as Smoothing Inverters, and Adjustable Speed Drives.

The transistor module is built with a high speed, short body structure that minimizes propagation delay and provides a low saturation voltage. It also has a low input capacitance and output capacitance, making it ideal for high frequency applications.

The CM600HA-5F is also designed to reduce power dissipation under heavy load conditions, as it has a low on-state resistance. The transistor module also utilizes a built-in voltage regulating circuit to compensate for temperature-related pressure changes, thereby extending its operating life.

The working principle of the CM600HA-5F is based on the metal oxide semiconductor field-effect transistor (MOSFET) structure. It uses insulated gate electrodes which allow the transistor to switch between different states depending on the input current. By controlling the current flow, the MOSFET can amplify an electrical signal or serve as an electrical switch.

The CM600HA-5F can be used in a variety of applications, including variable frequency drives, switching power supplies, UPS systems, motion control systems, and other AC motor drive systems. It can also be used in power conversion, circuit protection, and other power management applications.

The CM600HA-5F provides a reliable, efficient solution for power control applications, and is rated for operation in temperatures up to 150 degrees Celsius. It is available in a range of sizes to match a variety of application requirements.

In conclusion, the CM600HA-5F transistor module from Mitsubishi Electric is a high speed, low loss IGBT module designed for use in power applications. It utilizes an insulated gate structure to switch between different states, and its built-in voltage regulating circuit helps to extend its operating life. The CM600HA-5F is suitable for use in applications such as variable frequency drives, switching power supplies, and UPS systems.

The specific data is subject to PDF, and the above content is for reference

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