Allicdata Part #: | 835-1098-ND |
Manufacturer Part#: |
CM600HU-12F |
Price: | $ 116.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | IGBT MOD SGL 600V 600A F SER |
More Detail: | IGBT Module Trench Single 600V 600A 1420W Chassis ... |
DataSheet: | CM600HU-12F Datasheet/PDF |
Quantity: | 29 |
1 +: | $ 106.29400 |
10 +: | $ 101.16400 |
25 +: | $ 97.74310 |
Series: | IGBTMOD™ |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | Trench |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 600A |
Power - Max: | 1420W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 600A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 160nF @ 10V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CM600HU-12F is a popular module IGBT made by Fuji Electric. It is designed for applications where high power and efficiency are needed. This module is especially suited for high power switching applications, such as electric motor drives, uninterruptible power supplies, or any other application that requires a high degree of power and reliability.
This module is capable of operating at incredibly high frequencies and providing power levels up to 600 amps. It can handle switching frequencies of up to 25kHz and operate up to 700V. The CM600HU-12F also incorporates a built-in EMI filter, which aids in lower RFI emissions. This makes it ideal for a variety of electronic applications.
The CM600HU-12F is part of Fuji Electric’s CM Series of insulated gate bipolar transistors. An IGBT combines the features of a power MOSFET and a bipolar transistor to create a power switching device with low losses and high efficiency. This is achieved by the power MOSFET’s ability to rapidly switch high voltage, and the bipolar transistor’s ability to handle large currents. The integration of these two components makes the CM600HU-12F an ideal addition to any high power switching application.
The working principle of the CM600HU-12F is relatively simple. When the control signal is applied to the gate (G), a current flow occurs between the collector (C) and the emitter (E). This current flow is controlled by the magnitude of the signal applied to the gate. The CM600HU-12F is designed to operate with a low turn-on/turn-off threshold, allowing it to be used in applications where low voltage and low current control signals are desired.
This module can also be used in applications that require very fast switching times, such as servo motor drives, high power factor AC inverters, and frequency converters. One of the unique features of the CM600HU-12F is that it can be paralleled with other IGBTs or used individually. This means it can be used to provide higher levels of power or improved efficiency of a system. The module also offers low RDS(on) values, ensuring low power losses.
The CM600HU-12F is a versatile power switching module and can be used in a wide variety of applications. Its combination of high power, high frequency capability, and low losses makes it a great choice for any high power switching application. It is a reliable, cost-effective solution to power switching needs.
The specific data is subject to PDF, and the above content is for reference
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