CM75RL-12NF Allicdata Electronics
Allicdata Part #:

CM75RL-12NF-ND

Manufacturer Part#:

CM75RL-12NF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: IGBT MOD 7PAC 600V 75A NF SER
More Detail: IGBT Module Three Phase Inverter with Brake 600V ...
DataSheet: CM75RL-12NF datasheetCM75RL-12NF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: IGBTMOD™
Part Status: Obsolete
IGBT Type: --
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Power - Max: 430W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 11.3nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The CM75RL-12NF is a popular insulated-gate bipolar transistor, IGBT Module product from the Infineon Technologies portfolio. CM75RL-12NF features high voltage blocking capability, excellent switching performance and high surge capability. It is suitable for all kinds of power electronic applications requiring high switching performance and high blocking voltage. The CM75RL-12NF is available in two different versions, the LM75RL-12NF for up to 250VAC and the CM75RL-12NF for up to 500VAC.

The CM75RL-12NF has a wide range of applications in power electronics, such as solar inverters, UPS systems, motor control, LCD monitors and industrial drives. The main advantage of CM75RL-12NF over other IGBT Modules is its high voltage insulation capability which delivers excellent performance in switching applications and high surge load capability. In addition, it has low switching losses, high power density and fast switching speeds due to the insulated gate bipolar architecture.

The working principle of the CM75RL-12NF is based on the insulated-gate bipolar transistor. It is composed of a three-layer PNPN structure in which an insulated layer is interposed between two base layers. The insulated layer, also known as the gate, possesses properties similar to those found in MOSFETs, enabling it to be controlled with a low gate-to-source voltage. When a gate voltage is applied, current starts to flow from the collector to the emitter. This creates a voltage drop across the device, which in turn causes a current to flow from the gate to the source. This process is known as an “insulated gate bipolar transistor”.

The CM75RL-12NF provides improved performance over standard IGBTs and MOSFETs due to its high current carrying capability, high switching performance and high voltage insulation capability. The insulated gate also helps with thermal management since it ensures that no losses occur when switching at higher temperatures. It also helps reduce the triggering jitter commonly seen in MOSFETs, as well as enabling higher power density.

Thanks to its various features, the CM75RL-12NF is ideally suited for applications such as solar inverters, UPS systems, motor control, LCD displays and industrial drives. Thanks to its high voltage insulation capability, excellent switching performance and high surge capability, the CM75RL-12NF provides power electronics engineers with the perfect solution for their application requirements.

The specific data is subject to PDF, and the above content is for reference

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