Allicdata Part #: | CM75TJ-24F-ND |
Manufacturer Part#: |
CM75TJ-24F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | MOD IGBT 75A 1200V 6-PAC |
More Detail: | IGBT Module Trench Three Phase Inverter 1200V 75A ... |
DataSheet: | CM75TJ-24F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | IGBTMOD™ |
Part Status: | Obsolete |
IGBT Type: | Trench |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 357W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 29nF @ 10V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CM75TJ-24F is an IGBT module featuring insulated gate bipolar transistors (IGBTs). This type of module combines two sub-circuits - an N-channel MOSFET and a PNP bipolar transistor - in order to produce high-efficiency power switching. This type of module is used in applications requiring high-power output and excellent switching dynamics.
The CM75TJ-24F can be used in a wide variety of applications, ranging from solar and wind energy systems, to industrial and automotive power control systems. It is also suitable for use in medium-current inverters, UPS systems, motor drives and industrial automation systems. Due to its high-efficiency power switching and excellent thermal performance, it is the ideal choice for many power switching applications.
The CM75TJ-24F features two separate sub-circuits – an N-channel MOSFET and a PNP bipolar transistor. The N-channel MOSFET produces a high-speed switching action and helps minimize switching losses, while the PNP bipolar transistor enables high-power outputs. These two elements are then connected together in a special configuration, which helps eliminate the need for an external diode.
The working principle of the CM75TJ-24F is simple but effective. When current flows through the module, the N-channel MOSFET is turned on and the PNP bipolar transistor is turned off. This results in the formation of a path for current flow. As a consequence, the load is energized and the circuit is closed. When the load is switched off, the reverse process takes place and the module turns off.
The CM75TJ-24F is capable of dissipating up to 550 watts at 600 volts. This outstanding power capacity, along with its outstanding thermal performance and excellent switching dynamics, makes it the ideal choice for many power switching applications. Its robust design ensures reliable performance in harsh ambient conditions, making it a reliable and cost-effective option.
In summary, the CM75TJ-24F is an IGBT module designed for use in a wide range of applications, from solar and wind energy systems to industrial and automotive power control systems. Its two-sub-circuit design allows for high-efficiency power switching and excellent switching dynamics, as well as excellent thermal performance. Furthermore, its robust design ensures reliable performance in harsh ambient conditions. As a result, it is the ideal choice for many power switching applications.
The specific data is subject to PDF, and the above content is for reference
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