CMUT5179 TR Allicdata Electronics

CMUT5179 TR Discrete Semiconductor Products

Allicdata Part #:

CMUT5179TR-ND

Manufacturer Part#:

CMUT5179 TR

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 20V 50MA SOT523
More Detail: RF Transistor NPN 15V 50mA 1.45GHz 250mW Surface M...
DataSheet: CMUT5179 TR datasheetCMUT5179 TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.28709
6000 +: $ 0.27342
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.45GHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Gain: 15dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SOT-523
Description

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This article will discuss the application field and working principle of CMUT5179 Transistors - Bipolar (BJT) - RF.

The BJT (Bipolar Junction Transistor) is a type of transistor, which is available in both NPN and PNP forms, that works as a current-controlled semiconductor device. BJTs are commonly used in a wide range of applications and they are reliable, inexpensive and versatile, making them preferred in most analog and digital circuits.

The CMUT5179 is a NPN BJT that is especially designed for radio frequency (RF) applications. This transistor has excellent gain and gain stability, which makes it ideal for use in high frequency amplifiers, oscillators, and other circuits for the amplification of radio signals up to the microwave frequency range.

The working principle of the CMUT5179 is similar to other BJTs. It consists of two PN junctions connected in a three-terminal device. The base-emitter junction is usually forward biased and the base-collector junction is normally reverse biased.

When a base current is applied to the base-emitter junction, some electrons from the N-type region near the collector move to the P-type region near the emitter. This forms an inversion layer in the N-type region which is called the “channel”. This channel is then used as a current path between the emitter and collector.

The current gain is determined by the number of electrons moving through this channel. The more electrons that move through it, the larger the current gain of the transistors. The voltage at which the current gain decreases is called the transition frequency or fT.

The CMUT5179 is designed specifically for RF applications and has been tested to have a high transition frequency (f T = 30GHz) and a high forward gain (h FE = 50). This makes the CMUT5179 the ideal choice for use in high frequency amplifiers, oscillators, and other circuits for the amplification of radio signals up to the microwave frequency range.

In conclusion, the CMUT5179 is an ideal choice for RF applications due to its high transition frequency, high forward gain, and excellent gain stability. It is reliable, inexpensive and versatile, making it the preferred choice for most analog and digital circuits.

The specific data is subject to PDF, and the above content is for reference

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