CMUT5551E BK

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	220V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 10mA, 5V
Power - Max:	250mW
Frequency - Transition:	300MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-523
Supplier Device Package:	SOT-523

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Transistors are the essential building blocks of today’s microelectronic circuits. CMUT5551E BK is a type of single bipolar junction transistor (BJT). It has three terminals, namely the collector, the base, and the emitter. The collector and the emitter usually have n-type doped material, and the base usually have p-type doped material, arranged in a sandwich-like fashion. Although BJTs are available in different shapes and sizes, the classic three-terminal BJT configuration is the same with the CMUT5551E BK. The working principle of a BJT is based on the electro-motive force (e.m.f) generated in the two diodes connected in two terminals of BJT. When a positive voltage is applied between the base and the emitter, the diode connected to the emitter becomes forward-biased and the diode connected to the collector becomes reverse-biased. The current flow between the emitter and the collector is known as the collector current. Thus when a positive voltage is applied at the base, a current is allowed to flow through the device, creating a current gain in the BJT amplifying circuit.In addition to voltage-controlled current gain, BJTs also exhibit an amount of current due to the small amount of reverse current. This reverse current is known as the small-signal forward current and is important because it leads to the current gain at high frequencies. The small-signal reverse current is primarily responsible for generating the small-signal voltage gain in BJTs. When a reverse voltage is applied to the base-emitter junction, the current in the base-collector junction is reversed. This creates a reverse-bias voltage at the collector-base junction and a low current path is created between the collector and the base. When thereverse voltage at the base-collector junction reaches a certain value, the transistor becomes saturated and the current flow between the base and collector decreases rapidly.In terms of application field, CMUT5551E BK is used in amplifiers and various other electronic devices such as switches, logic gates, timing circuits, and oscillators. BJTs are versatile and provide an immense amount of flexibility in formulating complex circuits. The ability to amplify and switch signals makes them suitable for a wide range of applications.BJTs can be used to switch high currents, create multiple gain stages, implement current sources, act as level shifters, and to provide fast switching. In addition, the fact that BJTs require only a small amount of current to operate, makes them very useful in applications that require minimum power consumption. Examples include, but are not limited to automotive and medical applications, microwave radar systems and portable electronics such as laptop computers and cell phones.CMUT5551E BK is a popular choice for amplifiers, especially for low noise amplifier designs. The low level noise associated with CJTs makes them suitable for many types of low-noise amplifier (LNA) circuits. Moreover, their ability to provide gain and a low distortion level makes them ideal for audio amplifiers and analog video amplifiers. In summary, CMUT5551E BK is a single bipolar junction transistor (BJT) with three terminals. Its operation is based on the e.m.f generated in the two diodes connected in two terminals of the BJT. Its application field includes amplifiers, switches, logic gates, timing circuits and oscillators. In addition, it is suitable for low noise amplifier designs and for audio and video amplifiers. Thus, CMUT5551E BK is an ideal choice for complex and low power circuits.

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