CMUT5551E TR Allicdata Electronics
Allicdata Part #:

CMUT5551ETR-ND

Manufacturer Part#:

CMUT5551E TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP
More Detail: Bipolar (BJT) Transistor NPN 220V 600mA 300MHz 250...
DataSheet: CMUT5551E TR datasheetCMUT5551E TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 220V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Description

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CMUT5551E TR is a kind of single bipolar junction transistors (BJT). It has a maximum collector current rating of 25 A, with a minimum voltage rating of 600 V. It features a high emitter to collector voltage rating, allowing it to be used in applications requiring high voltage. The package is a TO-220AB, making it suitable for surface mounting and has a high heat dissipation ability.

Application Fields

CMUT5551E TR can be used in a variety of applications in a number of industries. It is widely used in motor control and power switching, as well as in audio amplifications. Its high voltage rating and wide current range makes it suitable for a variety of applications. It can also be used in automotive and other transportation applications, such as for spark plugs for engine starters. Furthermore, it can be used in robotics and railway signaling applications, making it an ideal device for industrial use.

Working Principle

A transistor is a 3-terminal semiconductor device that can be used to control current. The CMUT5551E TR is a bipolar junction transistor (BJT), which consists of three layers of semiconductor material, an emitter, base, and collector. BJTs are current control devices. When a current is applied to the base, it controls the current flowing between the emitter and collector. The basis of operation for a BJT is that when a current is applied to the base, it creates a narrow region between the two semiconductor layers. This region is known as the base region, and allows current to flow between the collector and emitter. This current can be controlled by changing the current applied to the base.

The CMUT5551E TR utilizes the Darlington Pair configuration, in which two BJTs are connected in cascade. This configuration increases the current gain and provides better current driving capability. The device features a high emitter to collector voltage rating, allowing it to be used in applications requiring large voltages. The package is also designed to provide enhanced thermal performance, allowing it to be used in high-power applications.

Conclusion

The CMUT5551E TR is a single bipolar junction transistor (BJT). It offers a high voltage rating and wide current range, making it suitable for a variety of applications. It utilizes the Darlington Pair configuration, which provides increased current gain and better current driving capabilities. The device is available in a TO-220AB package and is suitable for surface mounting. It has a high heat dissipation rating, making it suitable for high power applications.

The specific data is subject to PDF, and the above content is for reference

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