CMUT5087E TR Discrete Semiconductor Products

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Introduction

The CMUT5087E is a collector to emitter voltage, three base bipolar junction transistor (BJT). It is a single, medium power transistor manufactured by STMicroelectronics specifically designed for switching applications. This transistor is capable of providing power gains up to 200V at temperatures of 20°C. The CMUT5087E TR is suitable to be used in applications such as outputstage power amplifiers, power switching, motor control, and in addition, it is especially suitable for high-power control applications.

Features

• Max. Collector-Emitter Voltage: 200V
• Max. Collector Current: 4A
• Max. Base Current: 4A
• Requires Heat Sink
• Wide Operating Temperature Range: -40 to 125°C

Applications

The CMUT5087E TR is primarily designed for use in high-power control applications. It is well suited for a variety of applications that require switching, such as in outputstage power amplifiers, motor control, stepper drive, and DC-DC converters. CMUT5087E TR can be used in a wide variety of applications such as push-pull amplifiers, power supplies, and other high frequency switching power applications. In addition, this device can be utilized in relay drive, and high frequency pulse-width modulation (PWM) applications.

Working Principle

The CMUT5087E TR is a three terminal device with Collector (C), Base (B) and Emitter (E) electrode connections. It operates in a manner similar to other bipolar transistors by using the minority charge carriers to control the current flowing through the transistor. The physics of this type of transistor involves the movement of holes and electrons in the junction region between the semiconductor material and the two terminals. In the case of the CMUT5087E TR, the collector, base and emitter electrodes are heavily doped regions of N-type and P-type semiconductor material that create a junction.

When a DC bias voltage is applied between the B and E terminals, a majority carrier population of a single type is created. A reverse biased junction between Collector (C) and Emitter (E) is formed and the current begins to flow due to the majority carriers and the mobile minority carriers created in the junction. The base terminal acts as a controlling electrode for the transistor current; for a given applied voltage, the current between Collector and Emitter varies depending on the amount of current flowing through the Base terminal. This is known as the voltage gain (hFE) of the transistor.

In addition, the CMUT5087E TR is capable of controlling large current and high power due to its inherent low on-state resistance. It is also suitable for applications with high-frequency switching due to its excellent switching performance.

Conclusion

In conclusion, the CMUT5087E TR is a single collector to emitter voltage, three base bipolar junction transistor. It is ideal for applications requiring high-power control, outputstage power amplifiers, motor control, and switching applications. The CMUT5087E TR is also suitable for the control of large currents and high power due to its low on-state resistance and excellent switching performance. Additionally, it provides excellent performance in high-frequency applications. With its wide operating temperature range and high voltage capability, it is an excellent choice for applications requiring reliable switching over a wide range of temperatures and voltages.

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