CP647-2N6287-WN Allicdata Electronics
Allicdata Part #:

CP647-2N6287-WN-ND

Manufacturer Part#:

CP647-2N6287-WN

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP DARL 20A 100V DIE
More Detail: Bipolar (BJT) Transistor PNP - Darlington 100V 20A...
DataSheet: CP647-2N6287-WN datasheetCP647-2N6287-WN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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Transistors, specifically bipolar junction transistors (BJTs), are semiconductor devices used for switching and amplifying electric signals. They are made of three basic elements: emitter, collector, and base. When current passes through the base of a BJT, it amplifies its voltage between the emitter and collector terminals. CP647-2N6287-WN is one such BJT. Let’s look at its application field and working principle.

Application Field: This BJT is designed for low-power linear and switching applications, including control and relay drivers, audio preamplifiers, communications, switching power converters, and interface circuits. It can be used in consumer electronics and automotive circuitry.

Working Principle: The CP647-2N6287-WN is a low-voltage, low-power NPN-type BJT. It’s made of an N-type semiconductor layer sandwiched between two P-type regions. When voltage is applied to the base, it forms a P-N junction and creates a current-producing electric field. This current, in turn, creates an increased flow of electrons between the emitter and collector terminals, resulting in amplified voltage between them. This phenomenon is known as the transistor action.

The CP647-2N6287-WN also has a high gain and relatively low output capacitance, making it ideal for a variety of applications. Its low-noise operation and low-power dissipation make it suitable for sensitive audio equipment, such as microphone and headphone amplifiers. Its low-cost and simple construction makes it a popular choice for many interface circuits.

The CP647-2N6287-WN offers many advantages over other transistor types. Its ability to amplify signals quickly and accurately makes it suitable for a wide variety of applications. Its low-noise operation and low-power dissipation make it a good choice for sensitive audio amplifiers. Its low-cost and simple construction also make it an attractive choice for interface circuits.

In conclusion, CP647-2N6287-WN is a low-voltage, low-power NPN-type BJT. It’s application field includes control and relay drivers, audio preamplifiers, communications, switching power converters, and interface circuits. The transistor action of CP647-2N6287-WN allows it to amplify signals quickly and accurately. It also has a high gain and low output capacitance, making it an ideal choice for many applications. In addition, its low-noise operation and low-power dissipation make it suitable for use in sensitive audio equipment. All of these advantages make the CP647-2N6287-WN a highly attractive choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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