
Allicdata Part #: | CP647-MJ11015-CT-ND |
Manufacturer Part#: |
CP647-MJ11015-CT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS PNP DARL 30A 120V DIE |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 120V 30A... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 300mA, 30A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 30A, 5V |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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The CP647-MJ11015-CT is a NPN epitaxial silicon planar transistor, commonly used in small signal amplification and low-power switching applications. It is classified in the Transistors - Bipolar (BJT) - Single category. This article will discuss the application field and working principle of the CP647-MJ11015-CT.The CP647-MJ11015-CT is a general-purpose type of NPN bipolar junction transistor (BJT) constructed with a PNP collector and an NPN emitter. It is suitable for use in applications such as driver stages, low-noise input stages, and audio output stages. The transistor is designed to operate at up to 55 volts, with a peak collector current of 7 amperes.At its most basic, a transistor works as a switch or an amplifier of electrical signals. The CP647-MJ11015-CT works on the same basic principle as most BJTs. It consists of a base region and two semiconductor layers, referred to as P-type and N-type. The P-type layer is made up of negatively charged electrons, and the N-type layer is made up of positively charged holes. The base region is sandwiched between the two layers, allowing for the flow of electrons from the base to the emitter, and creating a "valve" through which electrons can pass from the collector to the emitter.The operation of the CP647-MJ11015-CT depends on its biasing. Biasing is the process of applying voltage between the transistor\'s base and emitter terminals. A small amount of current can then flow through the transistor, and the exact amount of current depends on the biasing conditions. When the base-emitter voltage is increased, the transistor will turn on, allowing more current to flow through, which is referred to as saturation. Conversely, when the base-emitter voltage is decreased, the transistor will turn off, blocking current flow, which is referred to as cutoff.When the CP647-MJ11015-CT is used as an amplifier, biasing must be carefully adjusted. A signal voltage is then applied to the base-emitter junction, causing the transistor to amplify the signal. The amount of amplification is determined by the current gain, which is known as the transistor\'s beta (β). The CP647-MJ11015-CT has a typical beta of 200, meaning that the output signal is 200 times greater than the input signal.In summary, the CP647-MJ11015-CT is a general-purpose NPN BJT suitable for small signal amplification and low-power switching applications. It works on the same basic principle as most BJTs, by allowing an electrical signal to pass through its base-emitter junction when appropriately biased. When used as an amplifier, the CP647-MJ11015-CT offers a typical current gain of 200.
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