CP647-MJ11015-WN Allicdata Electronics
Allicdata Part #:

CP647-MJ11015-WN-ND

Manufacturer Part#:

CP647-MJ11015-WN

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP DARL 30A 120V DIE
More Detail: Bipolar (BJT) Transistor PNP - Darlington 120V 30A...
DataSheet: CP647-MJ11015-WN datasheetCP647-MJ11015-WN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30A, 5V
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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CP647-MJ11015-WN is a single bipolar transistor designed for a wide array of applications. This transistor is special for its revolutionary design, which takes advantage of the integration of modern circuit elements in order to provide superior performance and reliability. This article will discuss the application field and working principle of the CP647-MJ11015-WN transistor.

The CP647-MJ11015-WN is a single bipolar transistor specifically designed for high voltage applications. The device is engineered to be capable of handling up to 500V of saturation and reverse bias. It is suitable for applications ranging from high-voltage switching circuits to high-voltage amplifier circuits. The transistor is also flexible and can be easily integrated into existing designs. As such, the CP647-MJ11015-WN is an ideal choice for many different types of circuits.

The working principle of the CP647-MJ11015-WN is based on a principle known as bipolar junction transistor (BJT). This principle involves the integration of polar and nonpolar materials. Generally, a BJT consists of three terminals, commonly known as a base, an emitter, and a collector. When current is applied to the base of a BJT, the current is amplified at the collector. This amplification is a result of the varying amounts of minority carriers in the base and collector regions.

The CP647-MJ11015-WN utilizes a special feature known as a common-emitter configuration. In this configuration, the emitter of the device is shared between the base and collector, resulting in a simplified circuit design. This configuration allows the device to operate at higher current and power levels, while being able to maintain its high-voltage capabilities. Additionally, this configuration also helps to suppress unwanted noise, providing superior performance in noisy applications.

The CP647-MJ11015-WN transistor is a versatile device that can be used in a variety of applications. As mentioned, it is capable of handling high-voltage applications, making it an ideal choice for high-voltage switching and amplifier circuits. Additionally, the bipolar junction transistor design of the device enables it to be used in high-strength analog signals, providing excellent noise suppression. The device is also suitable for applications that involve high-speed switching. This makes the CP647-MJ11015-WN an ideal choice for many different types of circuits.

In conclusion, the CP647-MJ11015-WN is a single bipolar transistor designed for a wide array of applications. Its specialized design features provide superior performance, reliability, and noise suppression in applications that involve high-voltage and high-speed switching. The device is suitable for use in many different types of circuits, making it an ideal choice for many different projects. In addition, the device also provides excellent value, making it an ideal choice for high-voltage and high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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